碳纳米管表面Ni 12p5原位催化转化促进高性能锂硫电池中多硫化物的转化

IF 0.7 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Integrated Ferroelectrics Pub Date : 2023-09-02 DOI:10.1080/10584587.2022.2143187

Shenghong Mao, Wenxiao Su, Chunyuan Liu, Fu Zhao, Hongxia Zhao, Xiaoping Zheng

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引用次数: 0

摘要

摘要锂硫电池因其高能量密度和廉价的材料而受到广泛关注。硫的导电性差和电化学动力学慢阻碍了其应用。本文在碳纳米管上原位生长Ni12P5，制备了以硫为主体的复合材料。电化学测试表明，Ni12P5在锂硫电池中起到电催化剂的作用，在更高的电位下引发Li2S6和Li2S4的氧化，显著改善了充放电过程中的反应动力学。CNT@Ni12P5/S复合材料在0.1℃下的初始放电容量为1352 mAh/g，在0.2℃下循环100次后的保持容量为85%。关键词:锂硫电池阴极磷化镍电催化催化动力学披露声明作者未报告潜在的利益冲突。项目资助:甘肃省自然科学基金重点项目(No.22JR5RA313)、甘肃省教育厅甘肃高校创新基金项目(No.2021A-162, No.2022A-169)、兰州市人才创新创业计划项目(No.114)。兰州理工学院青年科技创新计划项目(No.2020KJ-18)和2019年兰州市首批科技计划项目(No.2019-1-46)。

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Catalytic Conversion of Ni ₁₂ P ₅ in Situ on the Surface of Carbon Nanotubes to Promote Polysulfide Conversion in High-Performance Lithium-Sulfur Batteries

Abstract Lithium-sulfur batteries have received lots of attention due to their high energy density and cheap material. The poor electrical conductivity and slow electrochemical kinetics of sulfur hinder their application. Here, we in situ grow Ni12P5 on carbon nanotube to prepare composites as sulfur host. Electrochemical tests show that Ni12P5 acts as an electrocatalyst in the lithium-sulfur batteries, initiating the oxidation of Li2S6 and Li2S4 at higher potentials, significantly improving the reaction kinetics during charging and discharging. The CNT@Ni12P5/S composite exhibited 1352 mAh/g initial discharge capacity at 0.1 C and a retention capacity of 85% after 100 cycles at 0.2 C.

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来源期刊

Integrated Ferroelectrics 工程技术-工程：电子与电气

CiteScore

1.40

自引率

0.00%

发文量

179

审稿时长

3 months

期刊介绍： Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.