PEDOT: PSS的结构和光学性质

IF 0.7 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Integrated Ferroelectrics Pub Date : 2023-09-02 DOI:10.1080/10584587.2023.2227056
Babak Emdadi, Ahmed Asimov
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引用次数: 0

摘要

摘要近年来,由聚(3,4 -乙烯二氧噻吩):聚(4-苯乙烯磺酸盐)(PEDOT: PSS)水分散体制备的薄膜因其在可见光范围内具有高透明度、优异的热稳定性和水溶液可加工性等优点而受到广泛关注。研究了退火对玻璃基板上自旋镀膜的结构和光学性能的影响。本文研究了二次退火对聚(3,4 -乙烯二氧噻吩):聚(苯乙烯磺酸盐)(PEDOT: PSS)薄膜结构和光学性能的影响。采用溶胶-凝胶自旋镀膜技术在室温下制备了厚度约150 nm的PEDOT: PSS薄膜。将得到的薄膜退火两次:在110°C温度下退火15 min,在170°C温度下退火1小时。采用x射线衍射(XRD)、椭偏光谱(SE)、光致发光光谱和原子力显微镜(AFM)等方法对薄膜进行了表征。研究表明,二次退火可以有效地减少缺陷。关键词:pedot导电聚合物x射线衍射分析椭偏法研究afm图像披露声明作者未报告潜在利益冲突。
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Structural and Optical Properties of PEDOT: PSS
AbstractIn recent years, films fabricated from poly (3, 4-ethylenedioxythiophene): poly (4-styrenesulfonate) (PEDOT: PSS) aqueous dispersions have attracted lot of attention due to their exceptional advantages of high transparency in the visible range, excellent thermal stability and aqueous solution processibility. The effect of annealing on the structural, and optical properties of films obtained by the spin coating method on glass substrates has been investigated. This work investigated the impact of second annealing on the structural, and optical properties of poly (3, 4-ethylene dioxythiophene): poly (styrene sulfonate) (PEDOT: PSS) thin films. Thin films PEDOT: PSS of about 150 nm thicknesses were deposited by sol-gel method spin coating technique at room temperature. The obtained films were annealed twice: by annealing at 110 °C temperature for 15 min, and at 170 °C within one hour. The films were characterized by X-ray diffraction (XRD), spectroscopic ellipsometry (SE), photoluminescence spectroscopy, and atomic force microscopy (AFM) methods. Studies have shown that second annealing has reduced defects, efficiently.Keywords: PEDOTconducting polymersX-ray diffraction analysisellipsometry investigationAFM image Disclosure StatementNo potential conflict of interest was reported by the author(s).
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来源期刊
Integrated Ferroelectrics
Integrated Ferroelectrics 工程技术-工程:电子与电气
CiteScore
1.40
自引率
0.00%
发文量
179
审稿时长
3 months
期刊介绍: Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.
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