(1- x) bifeo3 - x batio3无铅陶瓷的多铁性

IF 0.7 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Integrated Ferroelectrics Pub Date : 2023-09-29 DOI:10.1080/10584587.2023.2234562
Phakakorn Panpho, Kumaret Intrirak, Naratip Vittayakorn, Pongsakorn Jantaratana, Theerachai Bongkarn, Rattiphorn Sumang
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引用次数: 1

摘要

摘要采用常规固相反应法制备了无铅(1-x)BiFeO3-xBaTiO3陶瓷(简称BF-xBT),其组成范围为0.23≤x≤0.33 mol%。研究了x含量对BF-xBT陶瓷相结构、微观结构、磁性和电学性能的影响。加入x含量后,观察到菱形相和四方相共存。场发射扫描电镜(FESEM)显示,随着x含量的增加,BF-xBT陶瓷的平均晶粒尺寸先减小后增大。试样断口呈现出晶间断裂和晶内断裂的模式。在BF-xBT体系中加入x≥0.29 mol%,铁电性能得到增强。在x = 0.25 mol%时,介电性能和磁性能得到改善,最大值εr = 888,711, Mmax = 0.40 emu/g, Mr = 0.17 emu/g, Hc = 3.7 kOe。关键词:bifeo3 - batio3多铁性材料;微结构;本研究由国家科学研究与创新基金(NSRF)通过南京大学(R2565B059)资助。作者要感谢科学和技术学院,Pibulsongkram Rajabhat大学也得到了支持。该作品获得了国际材料科学、技术与工程会议与展览(ISTEM2022)最佳海报奖。
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Multiferroic Properties of (1- x )BiFeO 3 - x BaTiO 3 Lead-Free Ceramics
AbstractLead-free (1-x)BiFeO3-xBaTiO3 ceramics (abbreviated as BF-xBT), in a composition range of 0.23 ≤ x ≤ 0.33 mol%, were prepared by the conventional solid-state reaction method. The effect of x content on phase structure, microstructure, magnetic and electrical properties of BF-xBT ceramics is also investigated. With the incorporation of x content, the coexistence of rhombohedral and tetragonal phases was observed. Field emission scanning electron microscope (FESEM) micrographs revealed that the average grain size of BF-xBT ceramics first decreased and then increased with adding x content. The fracture surface of samples showed a mode of inter-granular fracture and intra-granular fracture. The ferroelectric properties were enhanced by adding x ≥ 0.29 mol% in the BF-xBT system. The dielectric and magnetic properties were improved with a maximum value are εr = 888,711, Mmax = 0.40 emu/g, Mr = 0.17 emu/g, and Hc = 3.7 kOe at x = 0.25 mol%Keywords: BiFeO3–BaTiO3multiferroic materialsmicrostructureferroelectric and magnetic properties Disclosure StatementNo potential conflict of interest was reported by the author(s).Additional informationFundingThis work was supported financially by The National Science, Research and Innovation Fund (NSRF) through Naresuan University (R2565B059). The authors wish to thank the Faculty of Science and Technology, Pibulsongkram Rajabhat University is also supported. This work received the best poster award from the International Conference and Exhibition on Science, Technology and Engineering of Materials (ISTEM2022).
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来源期刊
Integrated Ferroelectrics
Integrated Ferroelectrics 工程技术-工程:电子与电气
CiteScore
1.40
自引率
0.00%
发文量
179
审稿时长
3 months
期刊介绍: Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.
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