用x射线吸收光谱研究La掺杂对氧化铪局部结构的影响

IF 0.7 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Integrated Ferroelectrics Pub Date : 2023-09-29 DOI:10.1080/10584587.2023.2234560
Suparat Tongpeng, Suttipong Wannapaiboon, Pattanaphong Janphuang, Sukanda Jiansirisomboon
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引用次数: 0

摘要

摘要:以溶胶-凝胶法和旋涂法制备的thfo2基薄膜为研究体系,考察了La含量为20%、40%、50%和60%对薄膜性能的影响。通过GIXRD、XANES和EXAFS测量分析了膜的相形成、晶体结构和局部结构。Hf l3边缘的XANES数据显示,La含量的增加没有显著差异,表明在+4氧化态下,铪离子具有相当的稳定性。此外,EXAFS谱显示Hf4+的配位数为7,Hf-O键长为~ 2.11 Å,进一步证实了单斜HfO2结构的形成。在HfO2结构中,随着La浓度的增加,Hf-Hf和Hf-La键上的第二配位壳的结构变得更加有序。然而,研究表明,la掺杂浓度影响了从单斜相到四方相,最后是正交相的相变,导致铁电材料的存在。关键词:la掺杂hfo2薄膜相变xanesexafs致谢本工作得到了Suranaree理工大学(SUT)的支持,由泰国NRU项目下的高等教育委员会办公室和泰国同步加速器光研究所(公共组织)在BL 6A提供所有设施和资金支持。作者要感谢同步加速器研究所为GIXRD和XAS提供了BL1.1W的光束时间。感谢BL1.1W的Prae Chirawatkul博士和Chatree Saiyasombat博士在实验过程中进行的富有成果的讨论和协助。本文中的图形是使用Adobe Illustrator、SketchUp、BioRender、CaRIne v.3和Microsoft PowerPoint创建的。披露声明作者未报告潜在的利益冲突。本研究没有从公共、商业或非营利部门的资助机构获得任何特定的资助。
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Effects of La Doping on Local Structure of Hafnium Oxide Studied by X-Ray Absorption Spectroscopy
AbstractHfO2-based films prepared by the integration of the sol-gel method and spin-coating procedure were used as the study system to investigate the influence of La doping by varying the La contents of 20, 40, 50, and 60 wt%. GIXRD, XANES, and EXAFS measurements were performed to analyze phase formation, crystal structure, and local structure of the films. The XANES data of the Hf L3-edge show no significant difference with respect to an increase in La content, indicating a considerable stability of the hafnium ion in the +4 oxidation state. Moreover, the EXAFS spectrum shows that the coordination number of Hf4+ is seven and the Hf–O bond length is ∼2.11 Å, which additionally confirms the formation of monoclinic HfO2 structure. The contributions of the second coordination shells, which are assigned to the Hf–Hf and Hf–La bonds, become well-structured with increasing La concentration in the HfO2 structure. However, the study suggests that the La-doped concentration affects the phase transformation from monoclinic to tetragonal and finally orthorhombic phase, leading to the presence of ferroelectric materials.Keywords: La-doped HfO2thin filmsphase transitionXANESEXAFS AcknowledgmentsThis work was supported by the Suranaree University of Technology (SUT) by Office of the Higher Education Commission under NRU Project of Thailand and Synchrotron Light Research Institute (Public Organization), SLRI, Thailand at BL 6A for all facilities and financial supports. The authors wish to thank the Synchrotron Light Research Institute for the provision of beamtime for GIXRD and XAS at BL1.1W. Dr. Prae Chirawatkul and Dr. Chatree Saiyasombat of BL1.1W are acknowledged for their fruitful discussion and assistance during the experiment. The figures in this article were created using Adobe Illustrator, SketchUp, BioRender, CaRIne v.3, and Microsoft PowerPoint.Disclosure StatementNo potential conflict of interest was reported by the author(s).Additional informationFundingThis research did not receive any specific grant from funding agencies in the public, commercial, or not-for-profit sectors.
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来源期刊
Integrated Ferroelectrics
Integrated Ferroelectrics 工程技术-工程:电子与电气
CiteScore
1.40
自引率
0.00%
发文量
179
审稿时长
3 months
期刊介绍: Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.
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