高残余电阻率SrRuO3/DyScO3(110)薄膜的TC增强

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY APL Materials Pub Date : 2023-11-01 DOI:10.1063/5.0156344

Nathaniel J. Schreiber, Ludi Miao, Hari P. Nair, Jacob P. Ruf, Lopa Bhatt, Yorick A. Birkholzer, George N. Kotsonis, Lena F. Kourkoutis, Kyle M. Shen, Darrell G. Schlom

{"title":"高残余电阻率SrRuO3/DyScO3(110)薄膜的TC增强","authors":"Nathaniel J. Schreiber, Ludi Miao, Hari P. Nair, Jacob P. Ruf, Lopa Bhatt, Yorick A. Birkholzer, George N. Kotsonis, Lena F. Kourkoutis, Kyle M. Shen, Darrell G. Schlom","doi":"10.1063/5.0156344","DOIUrl":null,"url":null,"abstract":"Epitaxial untwinned SrRuO3 thin films were grown on (110)-oriented DyScO3 substrates by molecular-beam epitaxy. We report an exceptional sample with a residual resistivity ratio (RRR), ρ [300 K]/ρ [4 K] of 205 and a ferromagnetic Curie temperature, TC, of 168.3 K. We compare the properties of this sample to other SrRuO3 films grown on DyScO3(110) with RRRs ranging from 8.8 to 205, and also compare it to the best reported bulk single crystal of SrRuO3. We determine that SrRuO3 thin films grown on DyScO3(110) have an enhanced TC as long as the RRR of the thin film is above a minimum electrical quality threshold. This RRR threshold is about 20 for SrRuO3. Films with lower RRR exhibit TCs that are significantly depressed from the intrinsic strain-enhanced value.","PeriodicalId":7985,"journal":{"name":"APL Materials","volume":"72 3-4","pages":"0"},"PeriodicalIF":5.3000,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhanced <i>T</i>C in SrRuO3/DyScO3(110) thin films with high residual resistivity ratio\",\"authors\":\"Nathaniel J. Schreiber, Ludi Miao, Hari P. Nair, Jacob P. Ruf, Lopa Bhatt, Yorick A. Birkholzer, George N. Kotsonis, Lena F. Kourkoutis, Kyle M. Shen, Darrell G. Schlom\",\"doi\":\"10.1063/5.0156344\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Epitaxial untwinned SrRuO3 thin films were grown on (110)-oriented DyScO3 substrates by molecular-beam epitaxy. We report an exceptional sample with a residual resistivity ratio (RRR), ρ [300 K]/ρ [4 K] of 205 and a ferromagnetic Curie temperature, TC, of 168.3 K. We compare the properties of this sample to other SrRuO3 films grown on DyScO3(110) with RRRs ranging from 8.8 to 205, and also compare it to the best reported bulk single crystal of SrRuO3. We determine that SrRuO3 thin films grown on DyScO3(110) have an enhanced TC as long as the RRR of the thin film is above a minimum electrical quality threshold. This RRR threshold is about 20 for SrRuO3. Films with lower RRR exhibit TCs that are significantly depressed from the intrinsic strain-enhanced value.\",\"PeriodicalId\":7985,\"journal\":{\"name\":\"APL Materials\",\"volume\":\"72 3-4\",\"pages\":\"0\"},\"PeriodicalIF\":5.3000,\"publicationDate\":\"2023-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"APL Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0156344\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"APL Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/5.0156344","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

摘要

采用分子束外延法在(110)取向DyScO3衬底上生长出非双晶SrRuO3外延薄膜。我们报告了一个特殊的样品，其剩余电阻率比(RRR) ρ [300 K]/ρ [4 K]为205，铁磁居里温度TC为168.3 K。我们将该样品与在DyScO3(110)上生长的SrRuO3薄膜(RRRs为8.8 ~ 205)的性能进行了比较，并将其与目前报道的SrRuO3块体单晶进行了比较。我们确定在DyScO3(110)上生长的SrRuO3薄膜，只要薄膜的RRR高于最低电学质量阈值，就具有增强的TC。SrRuO3的RRR阈值约为20。RRR较低的薄膜的TCs明显低于本征应变增强值。

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Enhanced TC in SrRuO3/DyScO3(110) thin films with high residual resistivity ratio

Epitaxial untwinned SrRuO3 thin films were grown on (110)-oriented DyScO3 substrates by molecular-beam epitaxy. We report an exceptional sample with a residual resistivity ratio (RRR), ρ [300 K]/ρ [4 K] of 205 and a ferromagnetic Curie temperature, TC, of 168.3 K. We compare the properties of this sample to other SrRuO3 films grown on DyScO3(110) with RRRs ranging from 8.8 to 205, and also compare it to the best reported bulk single crystal of SrRuO3. We determine that SrRuO3 thin films grown on DyScO3(110) have an enhanced TC as long as the RRR of the thin film is above a minimum electrical quality threshold. This RRR threshold is about 20 for SrRuO3. Films with lower RRR exhibit TCs that are significantly depressed from the intrinsic strain-enhanced value.

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来源期刊

APL Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

9.60

自引率

3.30%

发文量

199

审稿时长

2 months

期刊介绍： APL Materials features original, experimental research on significant topical issues within the field of materials science. In order to highlight research at the forefront of materials science, emphasis is given to the quality and timeliness of the work. The journal considers theory or calculation when the work is particularly timely and relevant to applications. In addition to regular articles, the journal also publishes Special Topics, which report on cutting-edge areas in materials science, such as Perovskite Solar Cells, 2D Materials, and Beyond Lithium Ion Batteries.