高能球磨法制备掺钼Mn4Si7及表征

Pub Date : 2023-01-01 DOI:10.56042/ijpap.v61i9.3491

{"title":"高能球磨法制备掺钼Mn4Si7及表征","authors":"","doi":"10.56042/ijpap.v61i9.3491","DOIUrl":null,"url":null,"abstract":"Mn4Si7 is a non-degenerating semiconductor with an indirect band gap of 0.77eV having multi-domain applications. The Mn4Si7 and Mo-doped Mn4Si7 were synthesized by high-energy ball milling at 600 RPM for 50H. From the X-ray diffraction (XRD), the tetragonal phase was observed. The average crystalline size was estimated by the Debye-Scherrer equation which lies below ~25 nm. The morphology studies reveal different shapes and sizes were observed by scanning electron microscopy (SEM).","PeriodicalId":0,"journal":{"name":"","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Synthetization and Characterization of Mo-doped Mn4Si7 by High Energy Ball Mill\",\"authors\":\"\",\"doi\":\"10.56042/ijpap.v61i9.3491\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Mn4Si7 is a non-degenerating semiconductor with an indirect band gap of 0.77eV having multi-domain applications. The Mn4Si7 and Mo-doped Mn4Si7 were synthesized by high-energy ball milling at 600 RPM for 50H. From the X-ray diffraction (XRD), the tetragonal phase was observed. The average crystalline size was estimated by the Debye-Scherrer equation which lies below ~25 nm. The morphology studies reveal different shapes and sizes were observed by scanning electron microscopy (SEM).\",\"PeriodicalId\":0,\"journal\":{\"name\":\"\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0,\"publicationDate\":\"2023-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.56042/ijpap.v61i9.3491\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.56042/ijpap.v61i9.3491","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

Mn4Si7是一种非简并半导体，其间接带隙为0.77eV，具有多域应用。采用高能球磨法在600转/分的转速下合成了Mn4Si7和mo掺杂Mn4Si7。从x射线衍射(XRD)中观察到四方相。用Debye-Scherrer方程估计晶体的平均尺寸在~ 25nm以下。形貌研究表明，扫描电镜(SEM)观察到不同的形状和大小。

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Synthetization and Characterization of Mo-doped Mn4Si7 by High Energy Ball Mill

Mn4Si7 is a non-degenerating semiconductor with an indirect band gap of 0.77eV having multi-domain applications. The Mn4Si7 and Mo-doped Mn4Si7 were synthesized by high-energy ball milling at 600 RPM for 50H. From the X-ray diffraction (XRD), the tetragonal phase was observed. The average crystalline size was estimated by the Debye-Scherrer equation which lies below ~25 nm. The morphology studies reveal different shapes and sizes were observed by scanning electron microscopy (SEM).

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