{"title":"同时降低开关浪涌和开关损耗的高带宽有源栅极驱动器","authors":"Yuichi Noge, Masahito Shoyama","doi":"10.1541/ieejjia.22007696","DOIUrl":null,"url":null,"abstract":"This study investigates an active gate driver (AGD) for an SiC-MOSFET. The source current feedback type AGD utilizes the induced voltage of the source wire inductance as a negative feedback signal to regulate the source current di/dt. Recent improvements in the switching performance of the AGD is limited due to the feedback system bandwidth. In this paper, a high bandwidth current feedback type power operational amplifier is applied as the gate drive circuit. Switching characteristics of the conventional resistive gate driver and AGD are experimentally investigated via a double pulse test setup. The switching setup condition is 700 V / 80 A. This paper describes the development of the AGD circuit and experimental results. The over-shoot and ringing of the Vds and Is are reduced using the AGD. Moreover, the switching loss is simultaneously reduced.","PeriodicalId":1,"journal":{"name":"Accounts of Chemical Research","volume":null,"pages":null},"PeriodicalIF":16.4000,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High Bandwidth Active Gate Driver for Simultaneous Reduction of Switching Surge and Switching Loss of SiC-MOSFET\",\"authors\":\"Yuichi Noge, Masahito Shoyama\",\"doi\":\"10.1541/ieejjia.22007696\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This study investigates an active gate driver (AGD) for an SiC-MOSFET. The source current feedback type AGD utilizes the induced voltage of the source wire inductance as a negative feedback signal to regulate the source current di/dt. Recent improvements in the switching performance of the AGD is limited due to the feedback system bandwidth. In this paper, a high bandwidth current feedback type power operational amplifier is applied as the gate drive circuit. Switching characteristics of the conventional resistive gate driver and AGD are experimentally investigated via a double pulse test setup. The switching setup condition is 700 V / 80 A. This paper describes the development of the AGD circuit and experimental results. The over-shoot and ringing of the Vds and Is are reduced using the AGD. Moreover, the switching loss is simultaneously reduced.\",\"PeriodicalId\":1,\"journal\":{\"name\":\"Accounts of Chemical Research\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":16.4000,\"publicationDate\":\"2023-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Accounts of Chemical Research\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1541/ieejjia.22007696\",\"RegionNum\":1,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Accounts of Chemical Research","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1541/ieejjia.22007696","RegionNum":1,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
High Bandwidth Active Gate Driver for Simultaneous Reduction of Switching Surge and Switching Loss of SiC-MOSFET
This study investigates an active gate driver (AGD) for an SiC-MOSFET. The source current feedback type AGD utilizes the induced voltage of the source wire inductance as a negative feedback signal to regulate the source current di/dt. Recent improvements in the switching performance of the AGD is limited due to the feedback system bandwidth. In this paper, a high bandwidth current feedback type power operational amplifier is applied as the gate drive circuit. Switching characteristics of the conventional resistive gate driver and AGD are experimentally investigated via a double pulse test setup. The switching setup condition is 700 V / 80 A. This paper describes the development of the AGD circuit and experimental results. The over-shoot and ringing of the Vds and Is are reduced using the AGD. Moreover, the switching loss is simultaneously reduced.
期刊介绍：
Accounts of Chemical Research presents short, concise and critical articles offering easy-to-read overviews of basic research and applications in all areas of chemistry and biochemistry. These short reviews focus on research from the author’s own laboratory and are designed to teach the reader about a research project. In addition, Accounts of Chemical Research publishes commentaries that give an informed opinion on a current research problem. Special Issues online are devoted to a single topic of unusual activity and significance.
Accounts of Chemical Research replaces the traditional article abstract with an article "Conspectus." These entries synopsize the research affording the reader a closer look at the content and significance of an article. Through this provision of a more detailed description of the article contents, the Conspectus enhances the article's discoverability by search engines and the exposure for the research.
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