快速重离子辐照诱导InSb中离子径迹形成及孔隙度

IF 2.4 3区 材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS Journal of Vacuum Science & Technology A Pub Date : 2023-10-03 DOI:10.1116/6.0003007
Taleb Alwadi, Christian Notthoff, Shankar Dutt, Jessica Wierbik, Nahid Afrin, Alexander Kiy, Patrick Kluth
{"title":"快速重离子辐照诱导InSb中离子径迹形成及孔隙度","authors":"Taleb Alwadi, Christian Notthoff, Shankar Dutt, Jessica Wierbik, Nahid Afrin, Alexander Kiy, Patrick Kluth","doi":"10.1116/6.0003007","DOIUrl":null,"url":null,"abstract":"Ion track formation, irradiation-induced damage (amorphization), and the formation of porosity in InSb after 185 MeV 197Au swift heavy ion irradiation are studied as a function of ion fluence and irradiation angle. Rutherford backscattering spectrometry in channeling geometry reveals an ion track radius of about 16 nm for irradiation normal to the surface and 21 nm for off-normal irradiation at 30° and 60°. Cross-sectional scanning electron microscopy shows significant porosity that increases when irradiation was performed off-normal to the surface. Off-normal irradiation shows a preferential orientation of the pores at about 45° relative to the surface normal. Moreover, when subjected to identical conditions, InSb samples demonstrate notably higher swelling compared to GaSb bulk samples.","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":null,"pages":null},"PeriodicalIF":2.4000,"publicationDate":"2023-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ion track formation and porosity in InSb induced by swift heavy ion irradiation\",\"authors\":\"Taleb Alwadi, Christian Notthoff, Shankar Dutt, Jessica Wierbik, Nahid Afrin, Alexander Kiy, Patrick Kluth\",\"doi\":\"10.1116/6.0003007\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ion track formation, irradiation-induced damage (amorphization), and the formation of porosity in InSb after 185 MeV 197Au swift heavy ion irradiation are studied as a function of ion fluence and irradiation angle. Rutherford backscattering spectrometry in channeling geometry reveals an ion track radius of about 16 nm for irradiation normal to the surface and 21 nm for off-normal irradiation at 30° and 60°. Cross-sectional scanning electron microscopy shows significant porosity that increases when irradiation was performed off-normal to the surface. Off-normal irradiation shows a preferential orientation of the pores at about 45° relative to the surface normal. Moreover, when subjected to identical conditions, InSb samples demonstrate notably higher swelling compared to GaSb bulk samples.\",\"PeriodicalId\":17490,\"journal\":{\"name\":\"Journal of Vacuum Science & Technology A\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.4000,\"publicationDate\":\"2023-10-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Vacuum Science & Technology A\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1116/6.0003007\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, COATINGS & FILMS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Vacuum Science & Technology A","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1116/6.0003007","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, COATINGS & FILMS","Score":null,"Total":0}
引用次数: 0

摘要

研究了185mev (197Au)快速重离子辐照后InSb中离子径迹形成、辐照致损伤(非晶化)和孔隙形成与离子通量和辐照角的关系。通道几何的卢瑟福后向散射光谱显示,在30°和60°方向上,离子轨道半径为21 nm,而在正向照射下,离子轨道半径约为16 nm。横断面扫描电镜显示,当对表面进行非正常照射时,孔隙度显著增加。非正常辐照表明,相对于表面法线,孔隙的优先取向约为45°。此外,在相同的条件下,InSb样品与GaSb散装样品相比显着表现出更高的膨胀。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Ion track formation and porosity in InSb induced by swift heavy ion irradiation
Ion track formation, irradiation-induced damage (amorphization), and the formation of porosity in InSb after 185 MeV 197Au swift heavy ion irradiation are studied as a function of ion fluence and irradiation angle. Rutherford backscattering spectrometry in channeling geometry reveals an ion track radius of about 16 nm for irradiation normal to the surface and 21 nm for off-normal irradiation at 30° and 60°. Cross-sectional scanning electron microscopy shows significant porosity that increases when irradiation was performed off-normal to the surface. Off-normal irradiation shows a preferential orientation of the pores at about 45° relative to the surface normal. Moreover, when subjected to identical conditions, InSb samples demonstrate notably higher swelling compared to GaSb bulk samples.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Journal of Vacuum Science & Technology A
Journal of Vacuum Science & Technology A 工程技术-材料科学:膜
CiteScore
5.10
自引率
10.30%
发文量
247
审稿时长
2.1 months
期刊介绍: Journal of Vacuum Science & Technology A publishes reports of original research, letters, and review articles that focus on fundamental scientific understanding of interfaces, surfaces, plasmas and thin films and on using this understanding to advance the state-of-the-art in various technological applications.
期刊最新文献
ToF-SIMS analysis of ultrathin films and their fragmentation patterns. Spinel LiGa5O8 prospects as ultra-wideband-gap semiconductor: Band structure, optical properties, and doping Dislocation avalanches in nanostructured molybdenum nanopillars Plasma nitridation for atomic layer etching of Ni Hardness, adhesion, and wear behavior of magnetron cosputtered Ti:Zr-O-N thin films
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1