{"title":"从栅极驱动器输出电压估计igbt结温和负载电流","authors":"Hiromu Yamasaki, Katsuhiro Hata, Makoto Takamiya","doi":"10.1541/ieejjia.22007728","DOIUrl":null,"url":null,"abstract":"For the online condition monitoring of IGBTs, a new estimation method of both the junction temperature (TJ) and the load current (IL) of IGBTs using a momentary high-Z gate driving (MHZGD) from the output voltage (VOUT) of the gate driver is proposed, which can be integrated into the gate driver ICs. TJ is estimated from VOUT difference during and after the MHZGD period, and IL is estimated from VOUT during MHZGD. In the 110 switching measurements at 11 different TJ's from 25 °C to 125 °C and 10 different IL's from 12.5 A to 80 A for each of the three IGBTs, TJ and IL estimation errors in a low test cost parameter determination method are + 4.9 °C / − 8.4 °C and + 1.1 A / − 4.3 A, respectively. In contrast, TJ and IL estimation errors in a parameter determination method with small error are + 4.9 °C / − 8.1 °C and + 1.0 A / − 1.8 A, respectively.","PeriodicalId":1,"journal":{"name":"Accounts of Chemical Research","volume":null,"pages":null},"PeriodicalIF":16.4000,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Estimation of Both Junction Temperature and Load Current of IGBTs from Output Voltage of Gate Driver\",\"authors\":\"Hiromu Yamasaki, Katsuhiro Hata, Makoto Takamiya\",\"doi\":\"10.1541/ieejjia.22007728\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"For the online condition monitoring of IGBTs, a new estimation method of both the junction temperature (TJ) and the load current (IL) of IGBTs using a momentary high-Z gate driving (MHZGD) from the output voltage (VOUT) of the gate driver is proposed, which can be integrated into the gate driver ICs. TJ is estimated from VOUT difference during and after the MHZGD period, and IL is estimated from VOUT during MHZGD. In the 110 switching measurements at 11 different TJ's from 25 °C to 125 °C and 10 different IL's from 12.5 A to 80 A for each of the three IGBTs, TJ and IL estimation errors in a low test cost parameter determination method are + 4.9 °C / − 8.4 °C and + 1.1 A / − 4.3 A, respectively. In contrast, TJ and IL estimation errors in a parameter determination method with small error are + 4.9 °C / − 8.1 °C and + 1.0 A / − 1.8 A, respectively.\",\"PeriodicalId\":1,\"journal\":{\"name\":\"Accounts of Chemical Research\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":16.4000,\"publicationDate\":\"2023-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Accounts of Chemical Research\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1541/ieejjia.22007728\",\"RegionNum\":1,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Accounts of Chemical Research","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1541/ieejjia.22007728","RegionNum":1,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
摘要
针对igbt的在线状态监测，提出了一种利用瞬时高z栅极驱动(MHZGD)从栅极驱动器输出电压(VOUT)估计igbt结温(TJ)和负载电流(IL)的新方法，该方法可集成到栅极驱动集成电路中。TJ由MHZGD期间和之后的VOUT差估计，IL由MHZGD期间的VOUT估计。三种igbt分别在25°C至125°C的11种不同TJ和12.5 A至80 A的10种不同IL下进行了110次开关测量，在低测试成本参数确定方法中，TJ和IL估计误差分别为+ 4.9°C /−8.4°C和+ 1.1 A /−4.3 A。相比之下，小误差参数确定方法的TJ和IL估计误差分别为+ 4.9°C /−8.1°C和+ 1.0 a /−1.8 a。
Estimation of Both Junction Temperature and Load Current of IGBTs from Output Voltage of Gate Driver
For the online condition monitoring of IGBTs, a new estimation method of both the junction temperature (TJ) and the load current (IL) of IGBTs using a momentary high-Z gate driving (MHZGD) from the output voltage (VOUT) of the gate driver is proposed, which can be integrated into the gate driver ICs. TJ is estimated from VOUT difference during and after the MHZGD period, and IL is estimated from VOUT during MHZGD. In the 110 switching measurements at 11 different TJ's from 25 °C to 125 °C and 10 different IL's from 12.5 A to 80 A for each of the three IGBTs, TJ and IL estimation errors in a low test cost parameter determination method are + 4.9 °C / − 8.4 °C and + 1.1 A / − 4.3 A, respectively. In contrast, TJ and IL estimation errors in a parameter determination method with small error are + 4.9 °C / − 8.1 °C and + 1.0 A / − 1.8 A, respectively.
期刊介绍：
Accounts of Chemical Research presents short, concise and critical articles offering easy-to-read overviews of basic research and applications in all areas of chemistry and biochemistry. These short reviews focus on research from the author’s own laboratory and are designed to teach the reader about a research project. In addition, Accounts of Chemical Research publishes commentaries that give an informed opinion on a current research problem. Special Issues online are devoted to a single topic of unusual activity and significance.
Accounts of Chemical Research replaces the traditional article abstract with an article "Conspectus." These entries synopsize the research affording the reader a closer look at the content and significance of an article. Through this provision of a more detailed description of the article contents, the Conspectus enhances the article's discoverability by search engines and the exposure for the research.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
