Physical model simulations of Hf oxide resistive random access memory device with a spike electrode structure

Abstract Resistive memory has become an attractive new memory type due to its outstanding performance. Oxide-based resistive random access memory (RRAM) is one type of widely used memory whose resistance can be transformed by applying current or voltage. Memristors are widely used in various kinds of memories and neural morphological calculations. Therefore, it is of vital importance to understand the physical change mechanism of an internal memristor under stimulation to improve electrical properties of the memristor. In our studies, a device model based on Hf oxide was proposed, then completely processes of the forming, reset and set were simulated. Meantime, the generation and recombination of oxygen vacancies were considered in all the processes, making the simulation more practical. In addition, a spike electrode structure was applied, a gathering electric field can be generated in the oxide layer so that the improved device has a faster forming voltage, lower forming current and lower instantaneous power consumption in the ON state. Finally, the effects of spike electrode length on the forming process were studied, the research results reveal that a longer probe electrode can engage a lower forming voltage and accelerate the formation of conductive filaments.