Ag8SnS6晶体的合成、晶体结构及能量结构

IF 0.9 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Physics and Chemistry of Solid State Pub Date : 2023-09-12 DOI:10.15330/pcss.24.3.441-447
I.V. Semkiv, H.A. Ilchuk, N.Y. Kashuba, V.M. Kordan, A.I. Kashuba
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引用次数: 0

摘要

通过在密封的石英安瓿中直接熔化高纯度的Ag、Sn和S的化学计量混合物,合成了Ag8SnS6晶体。该银柱石在室温下结晶为正交结构(Pna21空间群(No. 33))。用广义梯度近似(GGA)和局域密度近似(LDA)对α α α -Ag8SnS6晶体的能带结构和态密度进行了理论第一性原理计算。采用PBE泛函和PBEsol函数计算GGA。所有计算参数与已知实验数据吻合良好。基于电子能带结构,计算了电子和空穴的有效质量。讨论了电子能带结构的各向异性行为。
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Synthesis, crystal and energy structure of the Ag8SnS6 crystal
The Ag8SnS6 crystal was synthesized by directly melting a high-purity stoichiometric mixture of elementary Ag, Sn, and S in a sealed quartz ampoule. This argyrodite crystallizes in the orthorhombic structure (Pna21 space group (No. 33)) at room temperature. The theoretical first-principle calculations of the electronic band structure and density of states of a αʹʹ-Ag8SnS6 crystal are estimated by the generalized gradient approximation (GGA) and local density approximation (LDA). A Perdew–Burke–Ernzerhof functional (PBE) and (PBEsol) were utilized for GGA calculation. All calculated parameters correlate well with known experimental data. Based on the electronic band structure, the effective mass of electrons and holes was calculated. The anisotropic behavior of electronic band structure is discussed.
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CiteScore
1.70
自引率
14.30%
发文量
83
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