有机掺杂混合钙钛矿太阳能电池性能比较研究

IF 0.7 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Integrated Ferroelectrics Pub Date : 2023-10-27 DOI:10.1080/10584587.2023.2234602
Natthapong Wongdamnern, Sakchai Laksee, Thanapong Sareein, Cheewita Suwanchawalit, Nutchapon Chotigkrai, Supakij Suttiruengwong, Narit Triamnak
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引用次数: 0

摘要

摘要成功制备了具有不同n值的中维杂化混合有机钙钛矿活性层PEA2(CH3NH3)n−1(PbI2)n和Dodec2(CH3NH3)n−1(PbI2)n。比较了它们的特性,找出了一种有希望应用于太阳能电池的候选材料。根据化学计量学,通过n值的变化来调整薄膜的适当层厚。对所有薄膜的物理外观、晶体结构、表面形貌、化学键合、光学性能、热湿稳定性和功率转换效率进行了全面的研究,以确定其潜力。当两种薄膜的n值较低时,均表现出准二维特性,提高了薄膜的稳定性和转换效率。随着n值的减小,两种材料的吸收边都向高能侧移动,电子带隙增大。时间经过72 h后,仍然可以观察到混合相和MAPbI3钙钛矿衍射峰。在60%湿度条件下,pea掺杂的MAPbI3薄膜的分解速度比dodecc掺杂的MAPbI3薄膜慢。关键词:PerovskiteMAPbI3hybridPEADodec披露声明作者未报告潜在利益冲突。本研究由Silpakorn大学研究、创新和创造基金(2018财政年度)资助。
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Comparative Properties Investigations of Organic Doped Hybrid-Perovskite Solar Cells
AbstractThe intermediate-dimensional hybrid mixed-organic perovskite active layers PEA2(CH3NH3)n−1(PbI2)n and Dodec2(CH3NH3)n−1(PbI2)n with various n values were successfully fabricated. Their characteristics were compared to find out a promising candidate for solar cell applications. The appropriate layer thickness of the films was tuned by a variation of n values based on stoichiometry. The physical appearance, crystal structure, surface morphology, chemical bonding, optical properties, stability to the heat and humidity, and power conversion efficiency of all films were examined thoroughly to determine their potential. For low n values of both film types, they showed the quasi-2D characteristic improving the film stability and conversion efficiency. The absorption edge of both types of materials shifted to a higher energy side and the electronic band gap increased with the decrease of n values. The mixed phase and MAPbI3 perovskite diffraction peaks were still observable even after time has passed for 72 h. Under the 60% humidity condition, the PEA-doped MAPbI3 films decomposed slower than the Dodec-doped MAPbI3 films.Keywords: PerovskiteMAPbI3hybridPEADodec Disclosure StatementNo potential conflict of interest was reported by the author(s).Additional informationFundingThis work was financially supported by Silpakorn University Research, Innovation and Creative Fund (Fiscal Year 2018).
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来源期刊
Integrated Ferroelectrics
Integrated Ferroelectrics 工程技术-工程:电子与电气
CiteScore
1.40
自引率
0.00%
发文量
179
审稿时长
3 months
期刊介绍: Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.
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