了解高功率脉冲磁控溅射沉积NbCx薄膜过程中的离子和原子通量

IF 2.4 3区 材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS Journal of Vacuum Science & Technology A Pub Date : 2023-10-27 DOI:10.1116/6.0002944
M. Farahani, T. Kozák, A. D. Pajdarová, A. Bahr, H. Riedl, P. Zeman
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引用次数: 0

摘要

采用时间平均质谱(MS)、时间平均光学发射光谱(OES)和等离子体输运模型相结合的方法,研究了高功率脉冲磁控溅射放电中离子和原子的输运过程,从而导致NbCx薄膜在不同重复频率和占空比下从化学计量型NbC复合靶沉积过程中化学计量学的变化。质谱分析表明,随着脉冲功率密度的增加(和脉冲长度的减小),源自目标元素的离子通量增加,这是由于电子密度的增加,从而增加了电子撞击电离的概率。由于C具有较高的电离能和较低的电离截面(与Nb相比),C+离子对沉积通量的贡献几乎可以忽略不计。此外,OES还跟踪了距离目标不同距离处离子和原子的密度。OES分析表明,原子密度随脉冲功率密度的增大而减小。相比之下,离子密度呈现出增加,这与质谱分析的结果一致。利用质谱、OES和建模的数据,我们能够估计原子到底物的通量。我们的观察表明,随着脉冲功率密度的增加,成膜物质的通量从富c向富nb转变,这与薄膜成分的变化相对应。我们进一步讨论了负责这种转变的内部等离子体过程的作用。
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Understanding ion and atom fluxes during high-power impulse magnetron sputtering deposition of NbCx films from a compound target
A combination of time-averaged mass spectroscopy (MS), time-averaged optical emission spectroscopy (OES), and plasma transport modeling was employed to understand the transport processes of ions and atoms in high-power impulse magnetron sputtering discharges resulting in changes in the stoichiometry of NbCx films during their deposition from a stoichiometric NbC compound target at different repetition frequencies and duty cycles. Mass spectrometry showed that the fluxes of ions originating from the elements of the target increase with increasing pulse power density (and decreasing pulse length) due to an increasing electron density and, thus, electron-impact ionization probability. Due to the higher ionization energy and much lower ionization cross section of C (compared to Nb), it was found that the contribution of C+ ions to the deposition flux is practically negligible. Additionally, OES tracked the densities of ions and atoms at different distances from the target. The OES analysis revealed that the atom densities decreased as the pulse power density increased. In contrast, the ion densities exhibited an increase, which is consistent with the findings of MS. Using the data from MS, OES, and modeling, we were able to estimate the fluxes of atoms to the substrate. Our observations demonstrated a transition from C-rich toward Nb-rich flux of film-forming species with increasing pulse power density, corresponding to changes in the film composition. We further discuss the role of internal plasma processes that are responsible for this transition.
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来源期刊
Journal of Vacuum Science & Technology A
Journal of Vacuum Science & Technology A 工程技术-材料科学:膜
CiteScore
5.10
自引率
10.30%
发文量
247
审稿时长
2.1 months
期刊介绍: Journal of Vacuum Science & Technology A publishes reports of original research, letters, and review articles that focus on fundamental scientific understanding of interfaces, surfaces, plasmas and thin films and on using this understanding to advance the state-of-the-art in various technological applications.
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