等离子体一步法合成掺锌Ga2O3薄膜的研究

IF 0.9 4区化学 Q4 CHEMISTRY, PHYSICAL High Energy Chemistry Pub Date : 2023-11-30 DOI:10.1134/s0018143923060115

L. A. Mochalov, M. A. Kudryashov, I. O. Prokhorov, M. A. Vshivtsev, Yu. P. Kudryashova, E. A. Slapovskaya, A.V. Knyazev

{"title":"等离子体一步法合成掺锌Ga2O3薄膜的研究","authors":"L. A. Mochalov, M. A. Kudryashov, I. O. Prokhorov, M. A. Vshivtsev, Yu. P. Kudryashova, E. A. Slapovskaya, A.V. Knyazev","doi":"10.1134/s0018143923060115","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3>A process for fabricating Zn-doped (up to 10 at %) β-Ga2O3 thin films by plasma-enhanced chemical vapor deposition has been studied. High-purity gallium, zinc, and oxygen were used as starting materials, and hydrogen was chosen as the carrier and plasma gas. A low-temperature nonequilibrium RF (40.68 MHz) discharge plasma at a reduced pressure (0.01 torr) was used to initiate chemical reactions of precursors. The plasma-chemical process was monitored using optical emission spectroscopy. Structural properties and morphology of the deposited β-Ga2O3 films were studied by various methods.","PeriodicalId":12893,"journal":{"name":"High Energy Chemistry","volume":"40 5","pages":""},"PeriodicalIF":0.9000,"publicationDate":"2023-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of the Plasma-Chemical Synthesis of Thin Ga2O3 Films Doped with Zn in One Step in Plasma\",\"authors\":\"L. A. Mochalov, M. A. Kudryashov, I. O. Prokhorov, M. A. Vshivtsev, Yu. P. Kudryashova, E. A. Slapovskaya, A.V. Knyazev\",\"doi\":\"10.1134/s0018143923060115\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<h3 data-test=\\\"abstract-sub-heading\\\">Abstract</h3>A process for fabricating Zn-doped (up to 10 at %) β-Ga2O3 thin films by plasma-enhanced chemical vapor deposition has been studied. High-purity gallium, zinc, and oxygen were used as starting materials, and hydrogen was chosen as the carrier and plasma gas. A low-temperature nonequilibrium RF (40.68 MHz) discharge plasma at a reduced pressure (0.01 torr) was used to initiate chemical reactions of precursors. The plasma-chemical process was monitored using optical emission spectroscopy. Structural properties and morphology of the deposited β-Ga2O3 films were studied by various methods.\",\"PeriodicalId\":12893,\"journal\":{\"name\":\"High Energy Chemistry\",\"volume\":\"40 5\",\"pages\":\"\"},\"PeriodicalIF\":0.9000,\"publicationDate\":\"2023-11-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"High Energy Chemistry\",\"FirstCategoryId\":\"92\",\"ListUrlMain\":\"https://doi.org/10.1134/s0018143923060115\",\"RegionNum\":4,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"High Energy Chemistry","FirstCategoryId":"92","ListUrlMain":"https://doi.org/10.1134/s0018143923060115","RegionNum":4,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}

引用次数: 0

摘要

研究了等离子体增强化学气相沉积法制备掺锌(高达10 at %) β-Ga2O3薄膜的工艺。以高纯镓、锌、氧为原料，氢气为载体和等离子体气体。采用低温非平衡射频(40.68 MHz)放电等离子体，减压(0.01 torr)引发前驱体的化学反应。等离子体化学过程采用发射光谱法进行监测。用各种方法研究了沉积的β-Ga2O3薄膜的结构性能和形貌。

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Investigation of the Plasma-Chemical Synthesis of Thin Ga2O3 Films Doped with Zn in One Step in Plasma

Abstract

A process for fabricating Zn-doped (up to 10 at %) β-Ga₂O₃ thin films by plasma-enhanced chemical vapor deposition has been studied. High-purity gallium, zinc, and oxygen were used as starting materials, and hydrogen was chosen as the carrier and plasma gas. A low-temperature nonequilibrium RF (40.68 MHz) discharge plasma at a reduced pressure (0.01 torr) was used to initiate chemical reactions of precursors. The plasma-chemical process was monitored using optical emission spectroscopy. Structural properties and morphology of the deposited β-Ga₂O₃ films were studied by various methods.

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来源期刊

High Energy Chemistry 化学-物理化学

CiteScore

1.50

自引率

28.60%

发文量

审稿时长

6-12 weeks

期刊介绍： High Energy Chemistry publishes original articles, reviews, and short communications on molecular and supramolecular photochemistry, photobiology, radiation chemistry, plasma chemistry, chemistry of nanosized systems, chemistry of new atoms, processes and materials for optical information systems and other areas of high energy chemistry. It publishes theoretical and experimental studies in all areas of high energy chemistry, such as the interaction of high-energy particles with matter, the nature and reactivity of short-lived species induced by the action of particle and electromagnetic radiation or hot atoms on substances in their gaseous and condensed states, and chemical processes initiated in organic and inorganic systems by high-energy radiation.