D. V. Kazantsev, A. V. Klekovkin, I. I. Minaev, E. A. Kazantseva, S. N. Nikolaev
{"title":"用半导体结构观察到横向分辨率为10 ~ 15nm的无孔径扫描近场光学显微镜探针","authors":"D. V. Kazantsev, A. V. Klekovkin, I. I. Minaev, E. A. Kazantseva, S. N. Nikolaev","doi":"10.1007/s10946-023-10174-2","DOIUrl":null,"url":null,"abstract":"<div><p>Using InSb/GaSb semiconductor quantum dots, we demonstrate the lateral spatial resolution of scattering apertureless near-field microscope equal to 10 – 15 nm at a wavelength of λ = 10<i>.</i>7 μm provided by a single-mode CO<sub>2</sub> laser. The measurement conditions make it possible to undoubtedly exclude any artifacts caused by the sample topography and other similar factors. We identify the strongly localized in-plane near-field signal with a two-dimensional electron gas clamped on the InSb/GaSb interface of quantum dots.</p></div>","PeriodicalId":0,"journal":{"name":"","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An Apertureless Scanning Near-Field Optical Microscope Probe with a Lateral Resolution of 10 – 15 nm Observed with a Semiconductor Structure\",\"authors\":\"D. V. Kazantsev, A. V. Klekovkin, I. I. Minaev, E. A. Kazantseva, S. N. Nikolaev\",\"doi\":\"10.1007/s10946-023-10174-2\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Using InSb/GaSb semiconductor quantum dots, we demonstrate the lateral spatial resolution of scattering apertureless near-field microscope equal to 10 – 15 nm at a wavelength of λ = 10<i>.</i>7 μm provided by a single-mode CO<sub>2</sub> laser. The measurement conditions make it possible to undoubtedly exclude any artifacts caused by the sample topography and other similar factors. We identify the strongly localized in-plane near-field signal with a two-dimensional electron gas clamped on the InSb/GaSb interface of quantum dots.</p></div>\",\"PeriodicalId\":0,\"journal\":{\"name\":\"\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0,\"publicationDate\":\"2023-11-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10946-023-10174-2\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1007/s10946-023-10174-2","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An Apertureless Scanning Near-Field Optical Microscope Probe with a Lateral Resolution of 10 – 15 nm Observed with a Semiconductor Structure
Using InSb/GaSb semiconductor quantum dots, we demonstrate the lateral spatial resolution of scattering apertureless near-field microscope equal to 10 – 15 nm at a wavelength of λ = 10.7 μm provided by a single-mode CO2 laser. The measurement conditions make it possible to undoubtedly exclude any artifacts caused by the sample topography and other similar factors. We identify the strongly localized in-plane near-field signal with a two-dimensional electron gas clamped on the InSb/GaSb interface of quantum dots.
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