Yavar Safaei Mehrabani, Samaneh Goldani Gigasari, Mohammad Mirzaei, Hamidreza Uoosefian
{"title":"一种用于CNFET技术中图像处理运动和边缘检测系统的新型高效非精确全加法器单元","authors":"Yavar Safaei Mehrabani, Samaneh Goldani Gigasari, Mohammad Mirzaei, Hamidreza Uoosefian","doi":"https://dl.acm.org/doi/10.1145/3524061","DOIUrl":null,"url":null,"abstract":"<p>In this paper, a novel and highly efficient inexact Full Adder cell by exploiting two logic styles including <b>conventional CMOS (C-COMS)</b> and <b>pass transistor logic (PTL)</b> are presented. The so-called <b>carbon nanotube field-effect transistor (CNFET)</b> technology is used to implement circuits at the transistor level. To justify the efficiency of our design, extensive simulations are performed at the transistor level as well as application level. Transistor-level simulations which are carried out by the HSPICE 2008 tool, demonstrate at least 12% higher performance in terms of <b>power-delay-area product (PDAP)</b> of the proposed circuit compared to the latest designs. At the application level, by using the MATLAB tool, inexact Full Adders are employed in the structure of the <b>ripple carry adder (RCA)</b> that is applied in motion and edge detection algorithms. Computer simulation results confirm the appropriate quality of the output images in terms of the <b>peak signal-to-noise ratio (PSNR)</b> and <b>structural similarity (SSIM)</b> criteria. At last, to make a compromise between hardware and application level parameters, the <b>power-delay-area-1/PSNR product (PDAPP)</b> and <b>power-delay-area-1/SSIM product (PDASP)</b> are considered as figures of merit. The proposed circuit shows remarkable improvement from the PDAPP and PDASP points of view compared to its counterparts.</p>","PeriodicalId":50924,"journal":{"name":"ACM Journal on Emerging Technologies in Computing Systems","volume":"63 1","pages":""},"PeriodicalIF":2.1000,"publicationDate":"2022-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Novel Highly-Efficient Inexact Full Adder Cell for Motion and Edge Detection Systems of Image Processing in CNFET Technology\",\"authors\":\"Yavar Safaei Mehrabani, Samaneh Goldani Gigasari, Mohammad Mirzaei, Hamidreza Uoosefian\",\"doi\":\"https://dl.acm.org/doi/10.1145/3524061\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>In this paper, a novel and highly efficient inexact Full Adder cell by exploiting two logic styles including <b>conventional CMOS (C-COMS)</b> and <b>pass transistor logic (PTL)</b> are presented. The so-called <b>carbon nanotube field-effect transistor (CNFET)</b> technology is used to implement circuits at the transistor level. To justify the efficiency of our design, extensive simulations are performed at the transistor level as well as application level. Transistor-level simulations which are carried out by the HSPICE 2008 tool, demonstrate at least 12% higher performance in terms of <b>power-delay-area product (PDAP)</b> of the proposed circuit compared to the latest designs. At the application level, by using the MATLAB tool, inexact Full Adders are employed in the structure of the <b>ripple carry adder (RCA)</b> that is applied in motion and edge detection algorithms. Computer simulation results confirm the appropriate quality of the output images in terms of the <b>peak signal-to-noise ratio (PSNR)</b> and <b>structural similarity (SSIM)</b> criteria. At last, to make a compromise between hardware and application level parameters, the <b>power-delay-area-1/PSNR product (PDAPP)</b> and <b>power-delay-area-1/SSIM product (PDASP)</b> are considered as figures of merit. 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A Novel Highly-Efficient Inexact Full Adder Cell for Motion and Edge Detection Systems of Image Processing in CNFET Technology
In this paper, a novel and highly efficient inexact Full Adder cell by exploiting two logic styles including conventional CMOS (C-COMS) and pass transistor logic (PTL) are presented. The so-called carbon nanotube field-effect transistor (CNFET) technology is used to implement circuits at the transistor level. To justify the efficiency of our design, extensive simulations are performed at the transistor level as well as application level. Transistor-level simulations which are carried out by the HSPICE 2008 tool, demonstrate at least 12% higher performance in terms of power-delay-area product (PDAP) of the proposed circuit compared to the latest designs. At the application level, by using the MATLAB tool, inexact Full Adders are employed in the structure of the ripple carry adder (RCA) that is applied in motion and edge detection algorithms. Computer simulation results confirm the appropriate quality of the output images in terms of the peak signal-to-noise ratio (PSNR) and structural similarity (SSIM) criteria. At last, to make a compromise between hardware and application level parameters, the power-delay-area-1/PSNR product (PDAPP) and power-delay-area-1/SSIM product (PDASP) are considered as figures of merit. The proposed circuit shows remarkable improvement from the PDAPP and PDASP points of view compared to its counterparts.
期刊介绍:
The Journal of Emerging Technologies in Computing Systems invites submissions of original technical papers describing research and development in emerging technologies in computing systems. Major economic and technical challenges are expected to impede the continued scaling of semiconductor devices. This has resulted in the search for alternate mechanical, biological/biochemical, nanoscale electronic, asynchronous and quantum computing and sensor technologies. As the underlying nanotechnologies continue to evolve in the labs of chemists, physicists, and biologists, it has become imperative for computer scientists and engineers to translate the potential of the basic building blocks (analogous to the transistor) emerging from these labs into information systems. Their design will face multiple challenges ranging from the inherent (un)reliability due to the self-assembly nature of the fabrication processes for nanotechnologies, from the complexity due to the sheer volume of nanodevices that will have to be integrated for complex functionality, and from the need to integrate these new nanotechnologies with silicon devices in the same system.
The journal provides comprehensive coverage of innovative work in the specification, design analysis, simulation, verification, testing, and evaluation of computing systems constructed out of emerging technologies and advanced semiconductors