纳米复合 Memristor 的紧凑行为模型

IF 0.4 4区计算机科学 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Communications Technology and Electronics Pub Date : 2024-01-02 DOI:10.1134/s1064226923100170

I. A. Surazhevsky, V. V. Rylkov, V. A. Demin

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引用次数: 0

摘要

摘要我们提出了纳米复合材料忆阻器（Co40Fe40B20）x（LiNbO3）100 - x的紧凑行为模型，该模型定量描述了实验室样品电导率的动态变化，还实现了电阻状态的有限存储时间以及周期与周期之间和器件与器件之间开关电压的扩散机制。在此模型的基础上，还展示了利用突触忆阻器连接实现脉冲神经网络的可能性。

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Compact Behavioral Model of a Nanocomposit Memristor

Abstract

We suggested a compact behavioral model of a nanocomposite memristor (Co₄₀Fe₄₀B₂₀)_x(LiNbO₃)_100 – x, which quantitatively describes the dynamics of changes in the conductivity of laboratory samples, and also implements the mechanisms of the finite storage time of resistive states and the spread in switching voltages from cycle to cycle and from device to device. The possibility of implementing a pulsed neural network with synaptic memristor connections based on this model is shown.

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来源期刊

Journal of Communications Technology and Electronics 工程技术-电信学

CiteScore

1.00

自引率

20.00%

发文量

170

审稿时长

10.5 months

期刊介绍： Journal of Communications Technology and Electronics is a journal that publishes articles on a broad spectrum of theoretical, fundamental, and applied issues of radio engineering, communication, and electron physics. It publishes original articles from the leading scientific and research centers. The journal covers all essential branches of electromagnetics, wave propagation theory, signal processing, transmission lines, telecommunications, physics of semiconductors, and physical processes in electron devices, as well as applications in biology, medicine, microelectronics, nanoelectronics, electron and ion emission, etc.