V. Yu. Lisenkov, M. M. Kharkov, D. V. Kolodko, A. V. Tumarkin, A. V. Kaziev
{"title":"在反应混合物中通过热靶脉冲磁控管沉积制备氧化硅薄膜","authors":"V. Yu. Lisenkov, M. M. Kharkov, D. V. Kolodko, A. V. Tumarkin, A. V. Kaziev","doi":"10.1134/s1064226923070070","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The modes of maintaining a pulsed magnetron discharge with a hot thermally insulated silicon target during operation in oxygen-containing gas mixtures (Ar + O<sub>2</sub>) have been studied. The range of the average power density at the target was 60–120 W/cm<sup>2</sup> at a pulse duration of 100–300 µs and a repetition rate of 0.5–2 kHz. Maps of stable operating modes of the sputtering system have been determined. Si<sub><i>x</i></sub>O<sub><i>y</i></sub> coatings were prepared on single-crystal silicon substrates at different values of the oxygen fraction in the gas flow and various parameters of the magnetron pulsed power supply and diagnosed.</p>","PeriodicalId":50229,"journal":{"name":"Journal of Communications Technology and Electronics","volume":"40 1","pages":""},"PeriodicalIF":0.4000,"publicationDate":"2024-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Preparation of Silicon Oxide Films by a Hot-Target Impulse Magnetron Deposition in a Reactive Mixture\",\"authors\":\"V. Yu. Lisenkov, M. M. Kharkov, D. V. Kolodko, A. V. Tumarkin, A. V. Kaziev\",\"doi\":\"10.1134/s1064226923070070\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<h3 data-test=\\\"abstract-sub-heading\\\">Abstract</h3><p>The modes of maintaining a pulsed magnetron discharge with a hot thermally insulated silicon target during operation in oxygen-containing gas mixtures (Ar + O<sub>2</sub>) have been studied. The range of the average power density at the target was 60–120 W/cm<sup>2</sup> at a pulse duration of 100–300 µs and a repetition rate of 0.5–2 kHz. Maps of stable operating modes of the sputtering system have been determined. Si<sub><i>x</i></sub>O<sub><i>y</i></sub> coatings were prepared on single-crystal silicon substrates at different values of the oxygen fraction in the gas flow and various parameters of the magnetron pulsed power supply and diagnosed.</p>\",\"PeriodicalId\":50229,\"journal\":{\"name\":\"Journal of Communications Technology and Electronics\",\"volume\":\"40 1\",\"pages\":\"\"},\"PeriodicalIF\":0.4000,\"publicationDate\":\"2024-01-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Communications Technology and Electronics\",\"FirstCategoryId\":\"94\",\"ListUrlMain\":\"https://doi.org/10.1134/s1064226923070070\",\"RegionNum\":4,\"RegionCategory\":\"计算机科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Communications Technology and Electronics","FirstCategoryId":"94","ListUrlMain":"https://doi.org/10.1134/s1064226923070070","RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Preparation of Silicon Oxide Films by a Hot-Target Impulse Magnetron Deposition in a Reactive Mixture
Abstract
The modes of maintaining a pulsed magnetron discharge with a hot thermally insulated silicon target during operation in oxygen-containing gas mixtures (Ar + O2) have been studied. The range of the average power density at the target was 60–120 W/cm2 at a pulse duration of 100–300 µs and a repetition rate of 0.5–2 kHz. Maps of stable operating modes of the sputtering system have been determined. SixOy coatings were prepared on single-crystal silicon substrates at different values of the oxygen fraction in the gas flow and various parameters of the magnetron pulsed power supply and diagnosed.
期刊介绍:
Journal of Communications Technology and Electronics is a journal that publishes articles on a broad spectrum of theoretical, fundamental, and applied issues of radio engineering, communication, and electron physics. It publishes original articles from the leading scientific and research centers. The journal covers all essential branches of electromagnetics, wave propagation theory, signal processing, transmission lines, telecommunications, physics of semiconductors, and physical processes in electron devices, as well as applications in biology, medicine, microelectronics, nanoelectronics, electron and ion emission, etc.