设计高移相效率宽调谐氮化硅滤波器

Qichao Wang, Qiang Zhang, Xinyan Ma, Kun Yin, Hui Yu
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摘要

具有超低损耗的氮化硅光子集成电路被广泛应用于电信和光传感等领域。然而,辐射损耗会随着半径的减小而迅速增加,从而导致氮化硅光子集成电路的体积变大。微弱的热光效应限制了高效率、低功耗的应用。本文研究了一种阶梯指数波导结构,通过增强模式约束来降低弯曲损耗。使用 Ansys MODE 设计了半径为 30μm 的弯曲。氮化硅波导的包层使用了热光学系数较高的聚合物,以提高移相器的调谐性能。波导周围的沟槽也起到绝热沟槽的作用,以提高热电极的效率。在 7.5mW 的热调谐功率下,300μm 长的氮化硅波导实现了 π 相移。最后,设计了一个半径为 50μm 的级联氮化硅微环谐振器,以实现 116nm 宽调谐范围的高效滤波器。该方案为氮化硅光子集成电路中的高密度、宽调谐和微型化器件提供了一种新方法。
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Design of a high phase-shift efficiency wide-tuning silicon nitride filter
Silicon nitride photonic integrated circuits with ultra-low loss are widely used in applications such as telecommunications and optical sensing. However, the radiation loss increases rapidly as the radius is reduced, resulting in large-sized silicon nitride photonic integrated circuits. The weak thermo-optical effect limits the high-efficiency, low-power consumption applications. In this paper, a stepped index waveguide structure is studied to reduce the bending loss by enhancing the mode confinement. A bend with a radius of 30μm is designed using Ansys MODE. Polymer with a high thermo-optic coefficient is used as the cladding of the silicon nitride waveguide to improve the tuning performance of the phase shifter. The grooves around the waveguide also acts as an adiabatic trench to increase the efficiency of the thermal electrode. A π phase shift under thermal tuned power of 7.5mW is achieved with a 300μm long silicon nitride waveguide. Finally, a cascaded silicon nitride micro-ring resonator with radius of 50μm is designed to achieve an efficient filter with a wide tuning range of 116nm. This scheme provides a novel approach for high-density, wide-tunable and miniaturized devices in silicon nitride photonic integrated circuits.
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