纳米线桥波导辅助硅偏振分光镜

Haipeng Liu, Jijun Feng, Jian Chen, Wenjie Zhou, Qunyu Bi, Heping Zeng
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引用次数: 0

摘要

在纳米桥波导的帮助下,展示了一种低损耗、宽带硅偏振分光器。横向磁光可通过纳米桥波导耦合到十字端口,而横向电光则主要从直通端口发出。所设计器件的耦合长度为 19.6 μm,在波长为 1565nm 的情况下,TM 模式的消光比为 32.43 dB,TE 模式的消光比为 34.23 dB。与传统的三波导耦合器结构相比,该器件基于谐振隧道原理,可有效提高制造容差。该器件采用商用 CMOS 加工设备制造,可实现 23.07 dB 的 TM 消光比或 23.46 dB 的 TE 消光比,且过量损耗较低,在 1525 至 1610 nm 波长范围内,两种模式的消光比均可超过 10 dB。该器件的性能还可以进一步提高,这将有助于其在商用集成光路中的实际应用。
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Nano-wire bridge waveguide-assisted silicon polarizing beam splitter
A low-loss and wideband silicon polarizing beam splitter is demonstrated with the assistance of a nano-bridge waveguide. Transverse magnetic light can be coupled to the cross port through the nano-bridge waveguide, while the transverse electric light comes out mainly from the through port. The designed device has a coupling length of 19.6 μm, which can realize an extinction ratio of 32.43 dB for TM mode or 34.23 dB for TE mode at a 1565-nm wavelength. Compared with the conventional three-waveguide coupler structure, the proposed device is based on a resonant tunneling principle, which can help to effectively improve the fabrication tolerance. The device is fabricated with a commercial CMOS processing facility, which can achieve an extinction ratio of 23.07 dB for TM or 23.46 dB for TE mode with a low excess loss, and the extinction ratio of more than 10 dB can be realized in the wavelength range from 1525 to 1610 nm for both modes. The device performance can be further improved, which would facilitate its practical applications in commercial integrated optical circuits.
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