{"title":"在具有带隙的材料中发现通用质量-能量等效关系","authors":"D. R. K. Chanana","doi":"10.14738/tecs.116.15906","DOIUrl":null,"url":null,"abstract":": This article describes how the discovery of the universal mass-energy equivalence relation came about and tabulates the possible high, medium and low voltage Metal-Oxide-Semiconductor-Field-Effect-Transistors (MOSFETs) from different semiconductors which could be n-channel or p-channel devices. Some points are to be considered for the tabulated MOSFETs which are enlisted. The universal mass-energy equivalence relation is dE/E = dm/m, where E is the energy and m is the mass.","PeriodicalId":119801,"journal":{"name":"Transactions on Machine Learning and Artificial Intelligence","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2023-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The Discovery of the Universal Mass-Energy Equivalence Relation in Materials Having a Bandgap\",\"authors\":\"D. R. K. Chanana\",\"doi\":\"10.14738/tecs.116.15906\",\"DOIUrl\":null,\"url\":null,\"abstract\":\": This article describes how the discovery of the universal mass-energy equivalence relation came about and tabulates the possible high, medium and low voltage Metal-Oxide-Semiconductor-Field-Effect-Transistors (MOSFETs) from different semiconductors which could be n-channel or p-channel devices. Some points are to be considered for the tabulated MOSFETs which are enlisted. The universal mass-energy equivalence relation is dE/E = dm/m, where E is the energy and m is the mass.\",\"PeriodicalId\":119801,\"journal\":{\"name\":\"Transactions on Machine Learning and Artificial Intelligence\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-11-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Transactions on Machine Learning and Artificial Intelligence\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.14738/tecs.116.15906\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Transactions on Machine Learning and Artificial Intelligence","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.14738/tecs.116.15906","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
:这篇文章介绍了普遍质能方程关系的发现过程，并以表格形式列出了不同半导体的高、中、低压金属氧化物半导体场效应晶体管（MOSFET），这些器件可以是 n 沟道器件，也可以是 p 沟道器件。表中列出的 MOSFET 需要考虑一些要点。通用的质能等价关系为 dE/E = dm/m，其中 E 为能量，m 为质量。
The Discovery of the Universal Mass-Energy Equivalence Relation in Materials Having a Bandgap
: This article describes how the discovery of the universal mass-energy equivalence relation came about and tabulates the possible high, medium and low voltage Metal-Oxide-Semiconductor-Field-Effect-Transistors (MOSFETs) from different semiconductors which could be n-channel or p-channel devices. Some points are to be considered for the tabulated MOSFETs which are enlisted. The universal mass-energy equivalence relation is dE/E = dm/m, where E is the energy and m is the mass.
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