碳化硅砂在硅晶体管结构反面加工技术中的应用

Steklo i Keramika Pub Date : 2023-06-01 DOI:10.14489/glc.2023.06.pp.069-072

A. R. Shakhmayeva, E. Kazalieva

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引用次数: 0

摘要

本文提出了一种方法，用于在金属沉积工艺之前处理硅晶体管结构的反面，并获得与正在形成的晶体管集电极的接触。研究了经碳化硅砂处理的硅表面粗糙度参数，以便在向晶体管集电极区域喷涂触点之前改善粘合性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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APPLICATION OF SILICON CARBIDE SAND IN THE TECHNOLOGY OF PROCESSING THE REVERSE SIDE OF SILICON TRANSISTOR STRUCTURES

A method is proposed for processing the reverse side of silicon transistor structures before the metal deposition process and obtaining contact to the collector of the transistor being formed. The parameters of the surface roughness of the silicon surface treated with carbide–silicon sand are studied in order to improve the adhesive properties before spraying the contact to the collector region of the transistor.

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Steklo i Keramika

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