使用二甲基(N, N-二甲基-3-丁烯-1-胺-N)铂和 H2 反应物的原子层沉积铂纳米粒子及其在二维 WS2 光电探测器中的应用

Dain Shin, Inkyu Sohn, Donghyun Kim, Jaehyeok Kim, Taewook Nam, Youngjun Kim, Jusang Park, Tatsuya Nakazawa, Seung-min Chung, Hyungjun Kim
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引用次数: 0

摘要

二维过渡金属二掺杂化合物(2D TMDCs)具有薄而灵活的结构,作为二维材料的代表可广泛应用于纳米电子技术。为制造高性能器件,人们积极开展了纳米颗粒对二维过渡金属二碲化物表面功能化的研究。其中,铂(Pt)作为一种表面功能化材料,因其有效的催化作用和优异的耐腐蚀性,在光传感器、生物传感器和气体传感器等多种应用中备受关注。然而,广泛用于铂纳米粒子合成的溶液法和 PVD 技术很难在纳米材料上形成分散的细小颗粒。原子层沉积(ALD)正在成为形成纳米粒子的一种有利方法,而二甲基(N,N-二甲基-3-丁烯-1-胺-N)铂(DDAP)可以克服传统 ALD 铂前驱体的缺点。在本研究中,我们在基于 DDAP 的 ALD 铂工艺中使用氢气作为新反应物,成功合成了铂薄膜,并评估了纳米颗粒在二氧化硅/硅基底上的形成情况。随后,利用二维 WS2(一种具有代表性的可见光光电探测器材料)制作了 ALD Pt 功能化光电探测器,并通过局部表面等离子体共振现象提供额外载流子,从而证实了光电流的改善。此外,在高表面能点(如 WS2 纳米片上的缺陷)优先生长可抑制缺陷对光激发电子的捕获,从而延长载流子寿命并防止器件表面氧化。在 500-1200 nm 波长范围内,ALD 铂功能化 WS2 光电探测器的光致发光率比原始 WS2 提高了 10-20 倍以上,响应时间也明显改善。这项研究提出了一种利用 ALD 进行铂功能化的新方法,为先进纳米器件的应用开辟了新的可能性。
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Atomic layer deposition of Pt nanoparticles using dimethyl (N, N–dimethyl-3-butene-1-amine−N) platinum and H2 reactant and its application to 2D WS2 photodetectors
2D transition metal dichalcogenides (2D TMDCs) have thin and flexible structures and can be widely applied to nanoelectronics technology as a representative of 2D materials. Research studies on the surface functionalization of 2D TMDCs with nanoparticles have been actively conducted for fabrication of high-performance devices. Specifically, platinum (Pt) has attracted significant attention as a surface functionalization material in various applications, including photosensors, biosensors, and gas sensors due to its effective catalytic effect and excellent corrosion resistance. However, solution-based methods and PVD technologies, widely used for Pt nanoparticle synthesis, have difficulties forming fine particles dispersed on nanomaterials. Atomic layer deposition (ALD) is emerging as an advantageous method for forming nanoparticles, and dimethyl (N,N-dimethyl-3-buten-1-amine-N) platinum (DDAP) can overcome disadvantages of conventional ALD Pt precursors. In this study, we successfully synthesized Pt films using hydrogen as a new reactant in the DDAP-based ALD Pt process and evaluated formation of nanoparticles on SiO2/Si substrates. Subsequently, the ALD Pt-functionalized photodetector was fabricated with 2D WS2, a representative visible-light photodetector material, and improvement of photocurrent was confirmed by providing additional carriers via the localized surface plasmon resonance phenomenon. Furthermore, preferentially growing at high surface energy points, such as defects on WS2 nanosheets, can suppress the capture of photoexcited electrons by defects, consequently extending the carrier lifetime and preventing surface oxidation of the device. In the wavelength range of 500–1200 nm, the photoresponsivity of the ALD Pt-functionalized WS2 photodetector was improved more than 10–20 times compared to pristine WS2, and the response time was also noticeably improved. This study presents a novel approach to Pt functionalization using ALD, opening new possibilities for advanced nanodevice applications.
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