(110)取向铁电 PbTiO3 薄膜的错位应变-错位应变相图:相场研究

Hui-Mei Li, Heng Zhang, Yujia Wang, Yunlong Tang, Yiniei Zhu, Xiu-Liang Ma
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引用次数: 0

摘要

人们发现,具有高指数取向的铁电薄膜具有独特的结构和性能。在这项工作中,我们通过相场模拟构建了(110)取向 PbTiO3 (PTO)薄膜的错配应变-错配应变相图。详细分析了铁电相结构、畴形态、体积分数和极化分量随各向异性应变的变化。正交钪基底和(110)取向 PTO 薄膜之间存在较大的各向异性应变,这使得通过各向异性应变来设计结构和性能成为可能。这些结果加深了人们对各向异性应变下(110)取向 PTO 薄膜铁电畴结构的理解,为高指数薄膜的各向异性应变工程实验提供了理论支持。
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Misfit strain-misfit strain phase diagram of (110)-oriented ferroelectric PbTiO3 films: a phase-field study
Ferroelectric thin films with high index orientations are found to possess unique structures and properties. In this work, we constructed the misfit strain-misfit strain phase diagram of (110)-oriented PbTiO3 (PTO) thin films by phase-field simulations. The evolutions of ferroelectric phase structures, domain morphologies, volume fractions, and polarization components with the anisotropic strains were analyzed in detail. Large anisotropic strains exist between the orthorhombic scandate substrates and (110)-oriented PTO films, which makes it possible to engineer the structures and properties by anisotropic strain. These results deepen the understanding of ferroelectric domain structures of (110)-oriented PTO films under the anisotropic strain and provide theoretical support for the anisotropic strain engineering of high-index thin films experimentally.
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