沉积在 MgAl2O4 上的γ-Ga2O3 的原子尺度研究及其与 β-Ga2O3 的关系

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY APL Materials Pub Date : 2024-01-12 DOI:10.1063/5.0180922
Jingyu Tang, Kunyao Jiang, Chengchao Xu, Matthew J. Cabral, Kelly Xiao, Lisa M. Porter, Robert F. Davis
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引用次数: 0

摘要

利用金属有机化学气相沉积技术,在以∼470 °C为中心的狭窄温度窗口内,在(100) MgAl2O4上沉积了标称相纯的γ-Ga2O3。在 440 ℃ 下沉积的薄膜要么结晶度低,要么呈无定形结构;而在 500 ℃ 下生长的薄膜则同时含有 β-Ga2O3 和 γ-Ga2O3。在 530 ℃ 时,获得了名义上相纯的β-Ga2O3 薄膜。对在 470 ℃ 下生长的 γ-Ga2O3 薄膜进行的原子分辨率扫描透射电子显微镜(STEM)研究发现,反相边界的密度很高。针对 γ-Al2O3 开发的平面缺陷模型被扩展用于解释在 γ-Ga2O3 STEM 图像中观察到的 Ga 亚晶格堆叠序列。在全面研究 470 °C 生长的薄膜和 600 °C 退火的同一薄膜中这两种相之间的外延关系时,讨论了在γ-Ga2O3 基体中存在的 180° 旋转畴和β-Ga2O3 包裹体的 90° 旋转畴。研究结果提出了以下假设:(i) 在 β-Ga2O3 中掺入某些掺杂剂(包括 Si、Ge、Sn、Mg、Al 和 Sc)会局部稳定 "γ 相";(ii) 这些掺杂剂的位点偏好会促进 "γ 相 "和/或 γ-Ga2O3 固溶体的形成。然而,在没有这些掺杂剂的情况下,纯γ-Ga2O3 仍然是最不稳定的 Ga2O3 多晶体,这表现在它的生长窗口非常窄,生长温度比其它 Ga2O3 多晶体低,而且γ-Ga2O3 和 β-Ga2O3 每式单位的赫尔姆霍兹自由能的计算差异比所有其它多晶体都大。
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Atomic-scale investigation of γ-Ga2O3 deposited on MgAl2O4 and its relationship with β-Ga2O3
Nominally phase-pure γ-Ga2O3 was deposited on (100) MgAl2O4 within a narrow temperature window centered at ∼470 °C using metal-organic chemical vapor deposition. The film deposited at 440 °C exhibited either poor crystallization or an amorphous structure; the film grown at 500 °C contained both β-Ga2O3 and γ-Ga2O3. A nominally phase-pure β-Ga2O3 film was obtained at 530 °C. Atomic-resolution scanning transmission electron microscopy (STEM) investigations of the γ-Ga2O3 film grown at 470 °C revealed a high density of antiphase boundaries. A planar defect model developed for γ-Al2O3 was extended to explain the stacking sequences of the Ga sublattice observed in the STEM images of γ-Ga2O3. The presence of the 180° rotational domains and 90° rotational domains of β-Ga2O3 inclusions within the γ-Ga2O3 matrix is discussed within the context of a comprehensive investigation of the epitaxial relationship between those two phases in the as-grown film at 470 °C and the same film annealed at 600 °C. The results led to the hypotheses that (i) incorporation of certain dopants, including Si, Ge, Sn, Mg, Al, and Sc, into β-Ga2O3 locally stabilizes the “γ-phase” and (ii) the site preference(s) for these dopants promotes the formation of “γ-phase” and/or γ-Ga2O3 solid solutions. However, in the absence of such dopants, pure γ-Ga2O3 remains the least stable Ga2O3 polymorph, as indicated by its very narrow growth window, lower growth temperatures relative to other Ga2O3 polymorphs, and the largest calculated difference in Helmholtz free energy per formula unit between γ-Ga2O3 and β-Ga2O3 than all other polymorphs.
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来源期刊
APL Materials
APL Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
9.60
自引率
3.30%
发文量
199
审稿时长
2 months
期刊介绍: APL Materials features original, experimental research on significant topical issues within the field of materials science. In order to highlight research at the forefront of materials science, emphasis is given to the quality and timeliness of the work. The journal considers theory or calculation when the work is particularly timely and relevant to applications. In addition to regular articles, the journal also publishes Special Topics, which report on cutting-edge areas in materials science, such as Perovskite Solar Cells, 2D Materials, and Beyond Lithium Ion Batteries.
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