铝(0.25% 铜)导体线中电迁移诱导的短程应力发展特性分析

IF 2.7 3区 物理与天体物理 Q2 PHYSICS, APPLIED Journal of Applied Physics Pub Date : 2024-01-12 DOI:10.1063/5.0178543
P.-C. Wang, K. T. Cavanagh, J. S. Gordineer, N. M. Caprotti
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引用次数: 0

摘要

我们在原位进行了扫描 X 射线微束地形图和荧光实验,以研究在单晶硅衬底上厚度为 0.5 μm、宽度为 10 μm、长度为 200 μm 的带有 1.5 μm 厚二氧化硅钝化层的铝 (0.25 at. % Cu) 导体线的电迁移行为。利用 X 射线形貌测量的应变灵敏度,可以详细检查电迁移引起的应力分布以及导体线在电迁移过程早期铜溶质耗尽时的演变情况。在 0.4 MA/cm2 和 303 °C 下进行电迁移时,贫铜阴极区的铝迁移很快诱发了短程应力梯度,以抵消铝的进一步流动。应力梯度在 5.3 小时的孵育时间内完全形成,并延伸至阴极端约 66 μm 的临界布勒赫长度。随后,在贫铜区域的下游端发生了塑性变形。除了阳极端 Al2Cu 沉淀产生的巨大应力似乎引发了钝化断裂之外,铜的优先电迁移并没有在贫铜区域之外引起可检测到的应力变化。为模拟实验观察结果,我们进行了初步的有限差分建模,从中提取了决定铝(铜)线电迁移的重要参数:铝(铜)线中铜和铝的表观有效价分别为-5.6 和-1.9,临界铜浓度为 0.16 at.%的临界铜浓度,超过这一浓度,铝的晶界扩散就会被有效阻断。
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Characterization of electromigration-induced short-range stress development in Al(0.25 at. % Cu) conductor line
Scanning x-ray microbeam topography and fluorescence experiments were conducted in situ to study the electromigration behavior of a 0.5 μm thick, 10 μm wide, and 200 μm long Al(0.25 at. % Cu) conductor line with 1.5 μm-thick SiO2 passivation on a single crystal Si substrate. The strain sensitivity of x-ray topography measurement allowed detailed examination of the electromigration-induced stress distribution and evolution in the conductor line in response to the depletion of Cu solute early in the electromigration process. Upon electromigration at 0.4 MA/cm2 and 303 °C, a short-range stress gradient was quickly induced by Al migration in the Cu-depleted cathode region to counteract further Al flow. The stress gradient was fully developed during the 5.3 h incubation time, extending over the critical Blech length of about 66 μm from the cathode end. Plastic deformation then occurred at the downstream end of the Cu-depleted region. The preferential electromigration of Cu did not cause detectable stress change outside the Cu-depleted region, except for the significant stress development from the Al2Cu precipitation at the anode end which appeared to initiate the fracture in the passivation. Preliminary finite difference modeling was undertaken to simulate the experimental observations, from which important parameters dictating electromigration in Al(Cu) line were extracted: an apparent effective valence of −5.6 and −1.9 for Cu and Al in Al(Cu), respectively, and a critical Cu concentration of 0.16 at. % above which Al grain boundary diffusion is effectively blocked.
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来源期刊
Journal of Applied Physics
Journal of Applied Physics 物理-物理:应用
CiteScore
5.40
自引率
9.40%
发文量
1534
审稿时长
2.3 months
期刊介绍: The Journal of Applied Physics (JAP) is an influential international journal publishing significant new experimental and theoretical results of applied physics research. Topics covered in JAP are diverse and reflect the most current applied physics research, including: Dielectrics, ferroelectrics, and multiferroics- Electrical discharges, plasmas, and plasma-surface interactions- Emerging, interdisciplinary, and other fields of applied physics- Magnetism, spintronics, and superconductivity- Organic-Inorganic systems, including organic electronics- Photonics, plasmonics, photovoltaics, lasers, optical materials, and phenomena- Physics of devices and sensors- Physics of materials, including electrical, thermal, mechanical and other properties- Physics of matter under extreme conditions- Physics of nanoscale and low-dimensional systems, including atomic and quantum phenomena- Physics of semiconductors- Soft matter, fluids, and biophysics- Thin films, interfaces, and surfaces
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