{"title":"磁性/非磁性异质结界面效应对自旋电子 MTJ 器件的影响综述","authors":"Yuhai Yuan, Yanfeng Jiang","doi":"10.1088/1361-6641/ad22fd","DOIUrl":null,"url":null,"abstract":"\n Magnetic tunnel junctions (MTJs), as the core storage unit of magneto resistive random-access memory (MRAM), have received a lot of attention and have a very important position in spintronics. In the MTJ devices, magnetic/nonmagnetic heterojunction structures are included, consisting of magnetic metals and magnetic insulators or nonmagnetic metals. The interface of the heterojunction has certain physical effects that can affect the performance of MTJ devices. In the review, combined with the existing research results, the physical mechanism of magnetic/non-magnetic heterojunction interface coupling is discussed. The influence of the interface effect of the heterojunction on the performance of MTJ devices is studied, and the optimization method is proposed specifically. This work systematically summarizes the interface effect of magnetic/non-magnetic heterojunction.","PeriodicalId":1,"journal":{"name":"Accounts of Chemical Research","volume":null,"pages":null},"PeriodicalIF":16.4000,"publicationDate":"2024-01-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Review on magnetic/nonmagnetic heterojunction interface effects on spintronic MTJ devices\",\"authors\":\"Yuhai Yuan, Yanfeng Jiang\",\"doi\":\"10.1088/1361-6641/ad22fd\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n Magnetic tunnel junctions (MTJs), as the core storage unit of magneto resistive random-access memory (MRAM), have received a lot of attention and have a very important position in spintronics. In the MTJ devices, magnetic/nonmagnetic heterojunction structures are included, consisting of magnetic metals and magnetic insulators or nonmagnetic metals. The interface of the heterojunction has certain physical effects that can affect the performance of MTJ devices. In the review, combined with the existing research results, the physical mechanism of magnetic/non-magnetic heterojunction interface coupling is discussed. The influence of the interface effect of the heterojunction on the performance of MTJ devices is studied, and the optimization method is proposed specifically. This work systematically summarizes the interface effect of magnetic/non-magnetic heterojunction.\",\"PeriodicalId\":1,\"journal\":{\"name\":\"Accounts of Chemical Research\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":16.4000,\"publicationDate\":\"2024-01-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Accounts of Chemical Research\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1088/1361-6641/ad22fd\",\"RegionNum\":1,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Accounts of Chemical Research","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1088/1361-6641/ad22fd","RegionNum":1,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
Review on magnetic/nonmagnetic heterojunction interface effects on spintronic MTJ devices
Magnetic tunnel junctions (MTJs), as the core storage unit of magneto resistive random-access memory (MRAM), have received a lot of attention and have a very important position in spintronics. In the MTJ devices, magnetic/nonmagnetic heterojunction structures are included, consisting of magnetic metals and magnetic insulators or nonmagnetic metals. The interface of the heterojunction has certain physical effects that can affect the performance of MTJ devices. In the review, combined with the existing research results, the physical mechanism of magnetic/non-magnetic heterojunction interface coupling is discussed. The influence of the interface effect of the heterojunction on the performance of MTJ devices is studied, and the optimization method is proposed specifically. This work systematically summarizes the interface effect of magnetic/non-magnetic heterojunction.
期刊介绍：
Accounts of Chemical Research presents short, concise and critical articles offering easy-to-read overviews of basic research and applications in all areas of chemistry and biochemistry. These short reviews focus on research from the author’s own laboratory and are designed to teach the reader about a research project. In addition, Accounts of Chemical Research publishes commentaries that give an informed opinion on a current research problem. Special Issues online are devoted to a single topic of unusual activity and significance.
Accounts of Chemical Research replaces the traditional article abstract with an article "Conspectus." These entries synopsize the research affording the reader a closer look at the content and significance of an article. Through this provision of a more detailed description of the article contents, the Conspectus enhances the article's discoverability by search engines and the exposure for the research.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
