通过简单的双自对准法制造出无寄生电容的柔性有机集成电路

SmartMat Pub Date : 2024-01-22 DOI:10.1002/smm2.1273
Baichuan Jiang, Xiao Han, Yu Che, Wenbin Li, Hong-wei Zheng, Jun Li, Cailing Ou, Nannan Dou, Zixiao Han, Tingyu Ji, Chuanhui Liu, Zhiyuan Zhao, Yunlong Guo, Yunqi Liu, Lei Zhang
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引用次数: 0

摘要

在集成电路(IC)中,寄生电容是降低电路动态性能的关键因素之一,例如,它会降低电路的工作频率。在有机晶体管中消除寄生电容是一项众所周知的挑战,因为制造成本和层间对准精度之间存在固有的权衡。在此,我们采用一种经济高效的方法来制造无多余电极重叠的有机薄膜晶体管和整流二极管,从而克服了这一限制。这是通过水平放置所有电极并引入 100 纳米以下的间隙来实现的。基于所获得的非寄生晶体管和二极管,在柔性衬底上制造出了一个具有代表性的由五级环形振荡器组成的小型集成电路,该集成电路在 1 V 的低驱动电压下也能可靠地工作。值得注意的是,当使用五碳烯作为有源层时,振荡器在 20 V 电源电压下每级的信号传播延迟为 5.8 μs。由于寄生电容一直是所有类型薄膜晶体管面临的共同挑战,我们的方法可能会为实现基于其他新兴高性能半导体的灵活大面积集成电路铺平道路。
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Flexible organic integrated circuits free of parasitic capacitance fabricated through a simple dual self‐alignment method
In integrated circuits (ICs), the parasitic capacitance is one of the crucial factors that degrade the circuit dynamic performance; for instance, it reduces the operating frequency of the circuit. Eliminating the parasitic capacitance in organic transistors is notoriously challenging due to the inherent tradeoff between manufacturing costs and interlayer alignment accuracy. Here, we overcome such a limitation using a cost‐effective method for fabricating organic thin‐film transistors and rectifying diodes without redundant electrode overlaps. This is achieved by placing all electrodes horizontally and introducing sub‐100 nm gaps for separation. A representative small‐scale IC consisting of five‐stage ring oscillators based on the obtained nonparasitic transistors and diodes is fabricated on flexible substrates, which performs reliably at a low driving voltage of 1 V. Notably, the oscillator exhibits signal propagation delays of 5.8 μs per stage at a supply voltage of 20 V when utilizing pentacene as the active layer. Since parasitic capacitance has been a common challenge for all types of thin‐film transistors, our approach may pave the way toward the realization of flexible and large‐area ICs based on other emerging and highly performing semiconductors.
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