用 H2S 在 Cd0.9Zn0.1Te 单晶上生长 CdS 异质结

Hao Yuan, T. Tiedje, Jingye Chen, Hui Wang, Brad Aitchison, Pawan Kumar, Yuxin Song
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摘要

抛光的 Cd0.9Zn0.1Te (CZT) 单晶在 200 至 280 °C 的温度下暴露于氮气中的稀 H2S,以便在表面生成硫化物层。通过光发射、X 射线吸收、截面扫描电镜和光谱椭偏仪研究了 H2S 暴露前后 CZT 表面的组成。在最高温度下,H2S 暴露会去除表面氧化物并耗尽 Te,留下 CdS 表面层。在 280 °C、接触 H2S 2 小时后,生长出厚度为 60 nm 的 CdS 层。与无意氧化的表面相比,因暴露于臭氧而初步氧化的表面对 H2S 的反应更强。
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Growth of CdS heterojunctions on Cd0.9Zn0.1Te single crystals with H2S
Polished Cd0.9Zn0.1Te (CZT) single crystals have been exposed to dilute H2S in nitrogen at temperatures from 200 to 280 °C in order to produce a sulfide layer on the surface. The composition of the CZT surfaces before and after H2S exposure has been investigated by photoemission, x-ray absorption, cross-sectional SEM, and spectroscopic ellipsometry. At the highest temperature, H2S exposure removes surface oxides and depletes Te, leaving a CdS surface layer. CdS layers 60 nm thick have been grown with a 2 h exposure to H2S at 280 °C. Surfaces that are initially oxidized through ozone exposure are much more reactive with H2S than unintentionally oxidized surfaces.
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