利用储层自旋积累实现量子点量子比特的高温自旋选择性

IF 6.6 1区 物理与天体物理 Q1 PHYSICS, APPLIED npj Quantum Information Pub Date : 2024-02-03 DOI:10.1038/s41534-024-00815-y
R. Jansen, S. Yuasa
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引用次数: 0

摘要

利用量子点中的自旋在大规模量子比特阵列中进行容错量子计算,需要在高温下进行高保真量子比特操作。这给单自旋初始化和读出带来了挑战。现有方案依赖于泽曼分裂或保利自旋封锁,电子基量子比特的典型能量尺度为 0.1 或 1 meV,因此只有在 0.1 或 1 K 左右的温度下才能获得足够的保真度。在这里,我们描述了一种在量子点中实现高温自旋选择性的方法,该方法使用带有自旋累积的储层,可确定性地设置量子点上单个电子的自旋。由于在硅中可以实现高达 10 meV 的自旋累积,因此即使在 4 K 的液氦浴中也可以实现误差率低于 10-4 的电可调自旋选择。通过附近铁磁体诱导和控制的储层自旋积累,经典信息(磁化方向)被映射到自旋量子比特上。这些特点为自旋量子比特在高温下运行提供了前景,并将量子计算和自旋电子学联系在一起。
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High temperature spin selectivity in a quantum dot qubit using reservoir spin accumulation

Employing spins in quantum dots for fault-tolerant quantum computing in large-scale qubit arrays with on-chip control electronics requires high-fidelity qubit operation at elevated temperature. This poses a challenge for single spin initialization and readout. Existing schemes rely on Zeeman splitting or Pauli spin blockade with typical energy scales of 0.1 or 1 meV for electron-based qubits, so that sufficient fidelity is obtained only at temperatures around or below 0.1 or 1 K, respectively. Here we describe a method to achieve high temperature spin selectivity in a quantum dot using a reservoir with a spin accumulation, which deterministically sets the spin of a single electron on the dot. Since spin accumulation as large as 10 meV is achievable in silicon, spin selection with electrically adjustable error rates below 10−4 is possible even in a liquid He bath at 4 K. Via the reservoir spin accumulation, induced and controlled by a nearby ferromagnet, classical information (magnetization direction) is mapped onto a spin qubit. These features provide the prospect of spin qubit operation at elevated temperatures and connect the worlds of quantum computing and spintronics.

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来源期刊
npj Quantum Information
npj Quantum Information Computer Science-Computer Science (miscellaneous)
CiteScore
13.70
自引率
3.90%
发文量
130
审稿时长
29 weeks
期刊介绍: The scope of npj Quantum Information spans across all relevant disciplines, fields, approaches and levels and so considers outstanding work ranging from fundamental research to applications and technologies.
期刊最新文献
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