更正:具有三重金属栅极的全栅极砷化镓-硅垂直 TFET 开关性能评估模拟研究。

0 MATERIALS SCIENCE, MULTIDISCIPLINARY Discover nano Pub Date : 2024-02-12 DOI:10.1186/s11671-024-03968-z
Dariush Madadi, Saeed Mohammadi
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Correction: Switching performance assessment of gate-all-around InAs-Si vertical TFET with triple metal gate, a simulation study.
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