B. D. Igamov, G. T. Imanova, A. I. Kamardin, I. R. Bekpulatov
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Investigation of Coatings Formed by Thermal Oxidation on Monocrystalline Silicon
The results of complex experimental studies of the parameters of thin coatings of SiO2 oxides on Si, formed by thermal oxidation at temperatures of 1200 °C, including studies using electron and X-r...
期刊介绍：
Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.
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