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引用次数: 0
摘要
碳化硅（SiC）具有宽带隙和耐高压的特性，是制造用于 5 G 和电动汽车的功能强大的高频芯片的理想材料。然而，碳化硅强大的化学键却使它的性能大打折扣。
Silicon carbide (SiC) is ideal for making powerful, high-frequency chips for 5 G and electric vehicles due to its wide band gap and resistance to high voltage. However, its powerful chemical bond s...
期刊介绍：
Materials and Manufacturing Processes deals with issues that result in better utilization of raw materials and energy, integration of design and manufacturing activities requiring the invention of suitable new manufacturing processes and techniques, unmanned production dependent on efficient and reliable control of various processes including intelligent processing, introduction of new materials in industrial production necessitating new manufacturing process technology, and more. Information is offered in various formats, including research articles, letter reports, review articles, conference papers, applied research, book and conference reviews, and entire issues devoted to symposia.
All submitted manuscripts are subject to initial appraisal by the Editors, and, if found suitable for further consideration, to peer review by independent, anonymous expert referees. All peer review is single blind and submission is online via ScholarOne Manuscripts.
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