量化光谱反照率对双面光伏组件测量和系统模型预测的影响

IF 8 2区 材料科学 Q1 ENERGY & FUELS Progress in Photovoltaics Pub Date : 2024-02-15 DOI:10.1002/pip.3789
Erin M. Tonita, Christopher E. Valdivia, Annie C. J. Russell, Michael Martinez-Szewczyk, Mariana I. Bertoni, Karin Hinzer
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引用次数: 0

摘要

我们全面分析了光谱反照率对光伏(PV)模块测量和系统模型预测的影响。我们以硅异质结 (SHJ) 组件为例,演示了如何在室内双面设备测量中通过使用缩放后部辐照度方法调整应用辐照度来考虑反照率。使用详细的三维有限元模型 DUET 对固定倾斜和水平单轴跟踪 (SAT) 阵列(北纬 15 至 75°)的系统模型性能进行了研究。光谱效应导致测得的 SHJ 模块短路电流变化达 2%,效率变化达 0.3%。我们进一步证明,根据部署配置和纬度的不同,在光伏系统建模中加入或省略光谱反照率所导致的后侧光谱失配系数(SMMs)在 ±13% 之间变化,而总的 SMMs(前侧+后侧)变化高达 3%。SAT 阵列的 SMM 与纬度的相关性较弱,而固定倾斜阵列的 SMM 则随着纬度的增加而增加,这是因为组件前侧的地面反射光比例不断增加。地面反射光占组件总入射辐照度的 2% 到 32%,在高纬度地区,固定倾斜阵列的比例明显更高(10%)。光谱反照率对以下情况的影响最大(1)高纬度地区的固定倾斜部署,(2)宽带隙技术,如包晶石和碲化镉电池,(3)在技术吸收范围内陡峭变化的反照率,以及(4)高反照率地面覆盖物。总之,我们证明,在这些情况下,忽略光谱反照率效应会导致光伏测量和系统级建模的不确定性达到百分之几的数量级。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Quantifying spectral albedo effects on bifacial photovoltaic module measurements and system model predictions

We provide a comprehensive analysis of the effect of spectral albedo on photovoltaic (PV) module measurements and system model predictions. We demonstrate how to account for albedo in indoor bifacial device measurements by adjusting the applied irradiance using the scaled rear irradiance method, exemplified on fabricated silicon heterojunction (SHJ) modules. System model performance is studied using a detailed 3D finite-element model, DUET, for fixed-tilt and horizontal single-axis tracked (SAT) arrays between 15 and 75°N. Spectral effects cause variations in measured SHJ module short-circuit current up to 2% and efficiency variation up to 0.3% abs. We further demonstrate that rear-side spectral mismatch factors (SMMs) resulting from including or omitting spectral albedo in PV system modeling vary between ±13%, while total (front+rear) SMMs vary up to 3%, depending on the deployment configuration and latitude. SAT array SMMs are weakly correlated with latitude, while fixed-tilt array SMMs increase with latitude, driven by an increasing proportion of ground-reflected light on the front-side of modules. Ground-reflections can constitute between 2% and 32% of total incident module irradiance, with notably high (>10%) contributions for fixed-tilt arrays at high latitude. Effects of spectral albedo are most significant for: (1) fixed-tilt deployments at high latitudes, (2) wide bandgap technologies such as perovskite and cadmium telluride cells, (3) albedos which vary steeply over the technology's absorption range, and (4) high albedo ground covers. Overall, we demonstrate that omitting spectral albedo effects can result in PV measurement and system-level modeling uncertainties on the order of several percent in these cases.

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来源期刊
Progress in Photovoltaics
Progress in Photovoltaics 工程技术-能源与燃料
CiteScore
18.10
自引率
7.50%
发文量
130
审稿时长
5.4 months
期刊介绍: Progress in Photovoltaics offers a prestigious forum for reporting advances in this rapidly developing technology, aiming to reach all interested professionals, researchers and energy policy-makers. The key criterion is that all papers submitted should report substantial “progress” in photovoltaics. Papers are encouraged that report substantial “progress” such as gains in independently certified solar cell efficiency, eligible for a new entry in the journal''s widely referenced Solar Cell Efficiency Tables. Examples of papers that will not be considered for publication are those that report development in materials without relation to data on cell performance, routine analysis, characterisation or modelling of cells or processing sequences, routine reports of system performance, improvements in electronic hardware design, or country programs, although invited papers may occasionally be solicited in these areas to capture accumulated “progress”.
期刊最新文献
Issue Information Photovoltaics Literature Survey (No. 194) Issue Information Investigation of Potential-Induced Degradation and Recovery in Perovskite Minimodules Role of Ag Addition on the Microscopic Material Properties of (Ag,Cu)(In,Ga)Se2 Absorbers and Their Effects on Losses in the Open-Circuit Voltage of Corresponding Devices
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