{"title":"用微弧氧化法制备铝基多孔 Al2O3 湿度敏感薄膜传感器","authors":"Junqing Xing, Meiqi Xu, Kangcai Xu, Chengtao Yang","doi":"10.1080/10584587.2023.2296321","DOIUrl":null,"url":null,"abstract":"In order to improve the stability, and sensitivity and response speed of moisture-sensitive sensors, the microarc oxidation process is used to realize the preparation of porous Al2O3 structure humi...","PeriodicalId":13686,"journal":{"name":"Integrated Ferroelectrics","volume":"11 1","pages":""},"PeriodicalIF":0.7000,"publicationDate":"2024-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Preparation of Aluminum-Based Porous Al2O3 Humidity-Sensitive Thin Film Sensors by Microarc Oxidation\",\"authors\":\"Junqing Xing, Meiqi Xu, Kangcai Xu, Chengtao Yang\",\"doi\":\"10.1080/10584587.2023.2296321\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In order to improve the stability, and sensitivity and response speed of moisture-sensitive sensors, the microarc oxidation process is used to realize the preparation of porous Al2O3 structure humi...\",\"PeriodicalId\":13686,\"journal\":{\"name\":\"Integrated Ferroelectrics\",\"volume\":\"11 1\",\"pages\":\"\"},\"PeriodicalIF\":0.7000,\"publicationDate\":\"2024-02-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Integrated Ferroelectrics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1080/10584587.2023.2296321\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Integrated Ferroelectrics","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1080/10584587.2023.2296321","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Preparation of Aluminum-Based Porous Al2O3 Humidity-Sensitive Thin Film Sensors by Microarc Oxidation
In order to improve the stability, and sensitivity and response speed of moisture-sensitive sensors, the microarc oxidation process is used to realize the preparation of porous Al2O3 structure humi...
期刊介绍：
Integrated Ferroelectrics provides an international, interdisciplinary forum for electronic engineers and physicists as well as process and systems engineers, ceramicists, and chemists who are involved in research, design, development, manufacturing and utilization of integrated ferroelectric devices. Such devices unite ferroelectric films and semiconductor integrated circuit chips. The result is a new family of electronic devices, which combine the unique nonvolatile memory, pyroelectric, piezoelectric, photorefractive, radiation-hard, acoustic and/or dielectric properties of ferroelectric materials with the dynamic memory, logic and/or amplification properties and miniaturization and low-cost advantages of semiconductor i.c. technology.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
