{"title":"采用电子束法沉积 ZrO2/Al2O3 栅极电介质叠层的 H-diamond MOSFET 性能提升","authors":"Fei Wang, Wei Wang, Genqiang Chen, PengHui Yang, Yanfeng Wang, Minghui Zhang, Ruozheng Wang, Wenbo Hu, Hongxing Wang","doi":"10.1016/j.diamond.2024.110905","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":505356,"journal":{"name":"Diamond and Related Materials","volume":"279 ","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Improved performance of H-diamond MOSFETs with ZrO2/Al2O3 gate dielectric stacks deposited by electron beam method\",\"authors\":\"Fei Wang, Wei Wang, Genqiang Chen, PengHui Yang, Yanfeng Wang, Minghui Zhang, Ruozheng Wang, Wenbo Hu, Hongxing Wang\",\"doi\":\"10.1016/j.diamond.2024.110905\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":505356,\"journal\":{\"name\":\"Diamond and Related Materials\",\"volume\":\"279 \",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Diamond and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1016/j.diamond.2024.110905\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Diamond and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1016/j.diamond.2024.110905","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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