Kaifang Weng, Changsheng Shen, Zhaofu Chen, Ningfeng Bai
{"title":"硅绝缘体后栅纳米真空沟道晶体管阵列研究","authors":"Kaifang Weng, Changsheng Shen, Zhaofu Chen, Ningfeng Bai","doi":"10.1116/6.0003346","DOIUrl":null,"url":null,"abstract":"Recent advances in nanofabrication have made it possible to combine planar solid-state devices with vacuum electronics to create planar nano vacuum channel transistors that offer the advantages of cold-field emission and ballistic transmission. However, the current research is mainly limited to the study of a single field emission transistor, which has problems such as low current and poor gate control capability. To solve the above problems, a multitip field emission array is used in this work, and gate modulation is performed by a back-gate structure to fabricate and process a back-gate nano vacuum transistor array. First, we conducted simulation modeling of the back-gate nano vacuum transistor, investigated the impact of its structural parameters on its performance, and obtained the optimal simulation results. Then, structural parameters of the back-gate nano vacuum channel transistor array (BG-NVCTA) are selected based on the simulation results and fabricated by electron beam lithography on the silicon wafer. The experimental results, agreed well with the simulation results, show that the BG-NVCTA device has excellent gate control characteristics and a high current density. Its anode current is greater than 5 μA, and the transconductance is 1.05 μS when the anode voltage is 5 V.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"28 2","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of silicon-on-insulator back-gate nano vacuum channel transistor array\",\"authors\":\"Kaifang Weng, Changsheng Shen, Zhaofu Chen, Ningfeng Bai\",\"doi\":\"10.1116/6.0003346\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Recent advances in nanofabrication have made it possible to combine planar solid-state devices with vacuum electronics to create planar nano vacuum channel transistors that offer the advantages of cold-field emission and ballistic transmission. However, the current research is mainly limited to the study of a single field emission transistor, which has problems such as low current and poor gate control capability. To solve the above problems, a multitip field emission array is used in this work, and gate modulation is performed by a back-gate structure to fabricate and process a back-gate nano vacuum transistor array. First, we conducted simulation modeling of the back-gate nano vacuum transistor, investigated the impact of its structural parameters on its performance, and obtained the optimal simulation results. Then, structural parameters of the back-gate nano vacuum channel transistor array (BG-NVCTA) are selected based on the simulation results and fabricated by electron beam lithography on the silicon wafer. The experimental results, agreed well with the simulation results, show that the BG-NVCTA device has excellent gate control characteristics and a high current density. Its anode current is greater than 5 μA, and the transconductance is 1.05 μS when the anode voltage is 5 V.\",\"PeriodicalId\":282302,\"journal\":{\"name\":\"Journal of Vacuum Science & Technology B\",\"volume\":\"28 2\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-02-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Vacuum Science & Technology B\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1116/6.0003346\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Vacuum Science & Technology B","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1116/6.0003346","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
纳米制造技术的最新进展使平面固态器件与真空电子器件的结合成为可能,从而制造出具有冷场发射和弹道传输优势的平面纳米真空沟道晶体管。然而,目前的研究主要局限于单场发射晶体管的研究,存在电流小、栅极控制能力差等问题。为解决上述问题,本研究采用了多芯片场发射阵列,并通过后栅结构进行栅极调制,制作和加工出了后栅纳米真空晶体管阵列。首先,我们对背栅纳米真空晶体管进行了仿真建模,研究了其结构参数对其性能的影响,并得到了最优的仿真结果。然后,根据仿真结果选择了背栅纳米真空沟道晶体管阵列(BG-NVCTA)的结构参数,并通过电子束光刻技术在硅片上制作了该阵列。实验结果与仿真结果一致,表明 BG-NVCTA 器件具有优异的栅极控制特性和较高的电流密度。其阳极电流大于 5 μA,阳极电压为 5 V 时的跨导为 1.05 μS。
Investigation of silicon-on-insulator back-gate nano vacuum channel transistor array
Recent advances in nanofabrication have made it possible to combine planar solid-state devices with vacuum electronics to create planar nano vacuum channel transistors that offer the advantages of cold-field emission and ballistic transmission. However, the current research is mainly limited to the study of a single field emission transistor, which has problems such as low current and poor gate control capability. To solve the above problems, a multitip field emission array is used in this work, and gate modulation is performed by a back-gate structure to fabricate and process a back-gate nano vacuum transistor array. First, we conducted simulation modeling of the back-gate nano vacuum transistor, investigated the impact of its structural parameters on its performance, and obtained the optimal simulation results. Then, structural parameters of the back-gate nano vacuum channel transistor array (BG-NVCTA) are selected based on the simulation results and fabricated by electron beam lithography on the silicon wafer. The experimental results, agreed well with the simulation results, show that the BG-NVCTA device has excellent gate control characteristics and a high current density. Its anode current is greater than 5 μA, and the transconductance is 1.05 μS when the anode voltage is 5 V.