{"title":"基于氮掺杂之字形 GeSe 纳米带的单栅极场效应晶体管中的可调负差分电阻行为","authors":"Caixia Guo, Wenlong Jiao, Tianxing Wang","doi":"10.1080/00150193.2023.2300613","DOIUrl":null,"url":null,"abstract":"This article presents a theoretical study on the negative differential resistance (NDR) behavior of a bilaterally hydrogen-passivated Zigzag GeSe nanoribbon based single-gate field-effect transisto...","PeriodicalId":12126,"journal":{"name":"Ferroelectrics","volume":"53 1","pages":""},"PeriodicalIF":0.6000,"publicationDate":"2024-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Tunable negative differential resistance behavior in the nitrogen-doped zigzag GeSe nanoribbon based single-gate field effect transistor\",\"authors\":\"Caixia Guo, Wenlong Jiao, Tianxing Wang\",\"doi\":\"10.1080/00150193.2023.2300613\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This article presents a theoretical study on the negative differential resistance (NDR) behavior of a bilaterally hydrogen-passivated Zigzag GeSe nanoribbon based single-gate field-effect transisto...\",\"PeriodicalId\":12126,\"journal\":{\"name\":\"Ferroelectrics\",\"volume\":\"53 1\",\"pages\":\"\"},\"PeriodicalIF\":0.6000,\"publicationDate\":\"2024-02-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Ferroelectrics\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1080/00150193.2023.2300613\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ferroelectrics","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1080/00150193.2023.2300613","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Tunable negative differential resistance behavior in the nitrogen-doped zigzag GeSe nanoribbon based single-gate field effect transistor
This article presents a theoretical study on the negative differential resistance (NDR) behavior of a bilaterally hydrogen-passivated Zigzag GeSe nanoribbon based single-gate field-effect transisto...
期刊介绍：
Ferroelectrics is designed to provide a forum for people working in ferroelectrics and related materials such as ferroelastics, ferroelectric-ferromagnetics, electrooptics, piezoelectrics, pyroelectrics, nonlinear dielectrics, and liquid crystals. Ferroelectrics publishes experimental and theoretical papers aimed at the understanding of ferroelectricity and associated phenomena and applied papers dealing with the utilization of these materials in devices and systems. An important aspect of Ferroelectrics is to provide a vehicle for the publication of interdisciplinary papers involving ferroelectricity.
The editor invites original papers and short communications on the theory, fabrication, properties, and applications of ferroelectrics and related materials. In addition to research papers, Ferroelectrics publishes appropriate and timely review articles.
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