胶体量子点导电层中电荷载流子传输过程的计算机模拟

IF 0.9 4区 化学 Q4 CHEMISTRY, PHYSICAL High Energy Chemistry Pub Date : 2024-02-27 DOI:10.1134/s0018143923090114
A. V. Nevidimov
{"title":"胶体量子点导电层中电荷载流子传输过程的计算机模拟","authors":"A. V. Nevidimov","doi":"10.1134/s0018143923090114","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>A quadratic dependence of the charge diffusion coefficient on the diameter of colloidal quantum dots (CQDs) has been established. The charge diffusion coefficient is shown to depend weakly on the polydispersity of a sample. It has been determined that a decrease in the root-mean-square displacement of a charge carrier is an exponential function of the thickness of a ligand shell and the relative fraction of particles that can become charge traps. An explanation has been proposed for the exponential dependence of the conductivity of PbS CQD layers on the CQD size, which consists in a decrease in the fraction of CQDs acting as charge carrier traps.</p>","PeriodicalId":12893,"journal":{"name":"High Energy Chemistry","volume":"127 1","pages":""},"PeriodicalIF":0.9000,"publicationDate":"2024-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Computer Simulation of Charge Carrier Transport Processes in the Conducting Layers of Colloidal Quantum Dots\",\"authors\":\"A. V. Nevidimov\",\"doi\":\"10.1134/s0018143923090114\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<h3 data-test=\\\"abstract-sub-heading\\\">Abstract</h3><p>A quadratic dependence of the charge diffusion coefficient on the diameter of colloidal quantum dots (CQDs) has been established. The charge diffusion coefficient is shown to depend weakly on the polydispersity of a sample. It has been determined that a decrease in the root-mean-square displacement of a charge carrier is an exponential function of the thickness of a ligand shell and the relative fraction of particles that can become charge traps. An explanation has been proposed for the exponential dependence of the conductivity of PbS CQD layers on the CQD size, which consists in a decrease in the fraction of CQDs acting as charge carrier traps.</p>\",\"PeriodicalId\":12893,\"journal\":{\"name\":\"High Energy Chemistry\",\"volume\":\"127 1\",\"pages\":\"\"},\"PeriodicalIF\":0.9000,\"publicationDate\":\"2024-02-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"High Energy Chemistry\",\"FirstCategoryId\":\"92\",\"ListUrlMain\":\"https://doi.org/10.1134/s0018143923090114\",\"RegionNum\":4,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"High Energy Chemistry","FirstCategoryId":"92","ListUrlMain":"https://doi.org/10.1134/s0018143923090114","RegionNum":4,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0

摘要

摘要 确定了电荷扩散系数与胶体量子点(CQDs)直径的二次相关性。研究表明,电荷扩散系数与样品的多分散性关系不大。据测定,电荷载流子均方根位移的减小是配体外壳厚度和可成为电荷陷阱的粒子相对比例的指数函数。对于 PbS CQD 层的电导率与 CQD 大小呈指数关系的解释是,作为电荷载流子陷阱的 CQD 部分减少了。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Computer Simulation of Charge Carrier Transport Processes in the Conducting Layers of Colloidal Quantum Dots

Abstract

A quadratic dependence of the charge diffusion coefficient on the diameter of colloidal quantum dots (CQDs) has been established. The charge diffusion coefficient is shown to depend weakly on the polydispersity of a sample. It has been determined that a decrease in the root-mean-square displacement of a charge carrier is an exponential function of the thickness of a ligand shell and the relative fraction of particles that can become charge traps. An explanation has been proposed for the exponential dependence of the conductivity of PbS CQD layers on the CQD size, which consists in a decrease in the fraction of CQDs acting as charge carrier traps.

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来源期刊
High Energy Chemistry
High Energy Chemistry 化学-物理化学
CiteScore
1.50
自引率
28.60%
发文量
62
审稿时长
6-12 weeks
期刊介绍: High Energy Chemistry publishes original articles, reviews, and short communications on molecular and supramolecular photochemistry, photobiology, radiation chemistry, plasma chemistry, chemistry of nanosized systems, chemistry of new atoms, processes and materials for optical information systems and other areas of high energy chemistry. It publishes theoretical and experimental studies in all areas of high energy chemistry, such as the interaction of high-energy particles with matter, the nature and reactivity of short-lived species induced by the action of particle and electromagnetic radiation or hot atoms on substances in their gaseous and condensed states, and chemical processes initiated in organic and inorganic systems by high-energy radiation.
期刊最新文献
Colloidal Quantum Dots: 3. Molecular Dynamics Simulation of Quantum Dot Structure Colloidal Quantum Dots: 1. Colloidal Quantum Dots, a New Class of Luminophores Colloidal Quantum Dots: 4. Colloidal Quantum Dots and Basic Photoluminescence Laws Colloidal Quantum Dots: 2. Methods for the Synthesis of Colloidal Quantum Dots Colloidal Quantum Dots: 5. Luminescence Features of Colloidal Quantum Dots
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