用于单晶片反应器中低温硅外延过程模拟的表面化学模型

IF 2.4 3区 材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS Journal of Vacuum Science & Technology A Pub Date : 2024-01-29 DOI:10.1116/6.0003340
Linda Jäckel, Andreas Zienert, Annekathrin Zeun, Anna-Sophie Seidel, Jörg Schuster
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引用次数: 0

摘要

我们利用三维反应器规模的计算流体动力学模拟,结合纯硅和掺磷硅(Si:P)薄膜生长的表面化学模型,对硅外延进行了研究。我们重点研究了使用二氯硅烷(DCS)和磷化氢的低温硅和 Si:P 过程。基于现有的适用于较高工艺温度的基于二氯硅烷的硅化学模型,我们为低温硅外延开发了一种新的动力学化学模型。由于没有足够的膦化学定性数据可用于动力学化学模型,为了将掺杂包括在内,我们为 Si:P 外延开发了一个额外的经验模型。这项工作提供了硅和硅:磷表面化学模型,可通过反应器规模的工艺模拟获得有价值的工艺见解,从而实现合理的工艺优化并支持工艺转移。工艺优化是通过工艺参数的变化来实现的,其主要目标是通过提高晶片内生长率的均匀性来减少硅工艺的可变性。
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Surface chemistry models for low temperature Si epitaxy process simulation in a single-wafer reactor
We investigate Si epitaxy using 3D reactor scale computational fluid dynamics simulations coupled with surface chemistry models for the growth of pure silicon and phosphorus-doped silicon (Si:P) films. We focus on low temperature Si and Si:P processes using dichlorosilane (DCS) and phosphine. Based on existing DCS-based Si chemistry models for higher process temperatures, we developed a new kinetic chemistry model for low temperature Si epitaxy. To include doping, we developed an additional empirical model for Si:P epitaxy as there is not sufficient qualitative data on phosphine chemistry available for a kinetic chemistry model. This work provides Si and Si:P surface chemistry models, which allow reactor scale process simulations to get valuable process insights, enabling rational process optimization and supporting process transfer. Process optimization is demonstrated through process parameter variation with the main goal being the reduction of Si process variability by increasing within-wafer growth rate homogeneity.
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来源期刊
Journal of Vacuum Science & Technology A
Journal of Vacuum Science & Technology A 工程技术-材料科学:膜
CiteScore
5.10
自引率
10.30%
发文量
247
审稿时长
2.1 months
期刊介绍: Journal of Vacuum Science & Technology A publishes reports of original research, letters, and review articles that focus on fundamental scientific understanding of interfaces, surfaces, plasmas and thin films and on using this understanding to advance the state-of-the-art in various technological applications.
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