使用交流等离子炬获取超细碳化钨的可能性研究

IF 0.4 4区 计算机科学 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Communications Technology and Electronics Pub Date : 2024-03-07 DOI:10.1134/s1064226923140085
Yu. D. Dudnik, V. E. Kuznetsov, A. A. Safronov, V. N. Shiryaev, O. B. Vasilieva, D. A. Gavrilova, M. A. Gavrilova
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引用次数: 0

摘要

摘要 本文论述了使用交流等离子体炬获得碳化钨的等离子体-化学过程的特点。合成是在氢气和甲烷等离子体中进行的。获得碳化钨的过程如下:WO3 氧化钨粉末暴露在最高温度达 10 000 K 的 H2 和 CH4 等离子体流中,气体混合物的流速达 0.02 g/s,在大多数实验中,等离子炬的功率达 3 kW。通过 X 射线衍射、扫描电子显微镜和使用能量色散 X 射线光谱的元素图谱对获得的样品进行了研究。结果发现,在合成过程中获得了碳化钨 WC,其尺寸范围为 5-20 μm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Study of the Possibility of Using an Alternating Current Plasma Torch to Obtain Ultrafine Tungsten Carbide

Abstract

The paper deals with the features of the plasma-chemical process for obtaining tungsten carbide using an alternating current plasma torch. The synthesis was carried out in hydrogen and methane plasma. The process of obtaining tungsten carbide is as follows: WO3 tungsten oxide powder is exposed to H2 and CH4 plasma flow with a maximum temperature of up to 10 000 K. The gas mixture flow rate was up to 0.02 g/s, the plasma torch power was up to 3 kW in most experiments. The obtained samples were studied by X-ray diffraction, scanning electron microscopy and elemental mapping using energy-dispersive X-ray spectroscopy. It was found that during the synthesis tungsten carbide WC was obtained, its dimensions are in the range of 5‒20 μm.

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来源期刊
CiteScore
1.00
自引率
20.00%
发文量
170
审稿时长
10.5 months
期刊介绍: Journal of Communications Technology and Electronics is a journal that publishes articles on a broad spectrum of theoretical, fundamental, and applied issues of radio engineering, communication, and electron physics. It publishes original articles from the leading scientific and research centers. The journal covers all essential branches of electromagnetics, wave propagation theory, signal processing, transmission lines, telecommunications, physics of semiconductors, and physical processes in electron devices, as well as applications in biology, medicine, microelectronics, nanoelectronics, electron and ion emission, etc.
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