用于高真空微机电系统设备的集成硅电子源

M. Krysztof, Paweł Miera, Paweł Urbański, T. Grzebyk, M. Hausladen, Rupert Schreiner
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摘要

文章介绍了为高真空微机电系统(HV MEMS)设备(即 MEMS 电子显微镜和 MEMS X 射线源)设计的硅电子源的开发过程。本文解释了这种电子源的技术限制和问题。介绍了从碳纳米管发射器到纯硅发射器的转变过程。总之,最终的电子源由集成在同一玻璃基板上的硅尖发射器和硅栅电极组成。该电子源产生的电子束不覆盖任何碳纳米管。它能产生较高且稳定的电子电流,并能在高压微机电系统设备的最终接合过程后工作。
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Integrated silicon electron source for high vacuum microelectromechanical system devices
The article presents the process of developing a silicon electron source designed for high-vacuum microelectromechanical system (HV MEMS) devices, i.e., MEMS electron microscope and MEMS x-ray source. Technological constraints and issues of such an electron source are explained. The transition from emitters made of carbon nanotubes to emitters made of pure silicon is described. Overall, the final electron source consists of a silicon tip emitter and a silicon gate electrode integrated on the same glass substrate. The source generates an electron beam without any carbon nanotube coverage. It generates a high and stable electron current and works after the final bonding process of an HV MEMS device.
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