相关狄拉克半金属 Pv-CaIrO3 外延薄膜中应变诱导的电子结构调制

Jian-ming Ding, Zhengtai Liu, Jiayu Liu, Jian Yuan, Liyang Wei, Zhicheng Jiang, Yichen Yang, Chihao Li, Yilin Wang, Yanfeng Guo, Mao Ye, Jishan Liu, Dawei Shen
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摘要

根据理论预测,包晶 CaIrO3 是一种接近莫特转变的狄拉克节点半金属,它在电子相关和自旋轨道耦合之间具有相当大的相互作用。电子相关能显著调整相对论狄拉克费米子的行为。在这里,我们利用氧化物分子束外延技术在不同基底上生长了高质量的过氧化物 CaIrO3 薄膜,以调节电子相关性和狄拉克电子状态。通过原位角度分辨光发射光谱,我们证明了应变诱导的包晶 CaIrO3 中 Jeff=1/2 带的带宽和有效质量的系统演化。在面内压应变作用下,Jeff=1/2 带的带宽明显增加,这可能是由于电子相关性减弱所致。压缩应变可能会移动狄拉克节点相对于费米水平的位置,并在空穴型传输特性向电子型传输特性的转变中发挥重要作用。我们的工作提供了一种可行的方法,可以通过设计电子相关性的强度来操纵拓扑狄拉克电子态。
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Strain-induced modulation of electronic structure in correlated Dirac semimetal Pv-CaIrO3 epitaxial thin films
Perovskite CaIrO3 is theoretically predicted to be a Dirac node semimetal near the Mott transition, which possesses a considerable interplay between electron correlations and spin–orbit coupling. Electron correlations can significantly tune the behavior of relativistic Dirac fermions. Here, we have grown high-quality perovskite CaIrO3 thin films on different substrates using oxide molecular beam epitaxy to modulate both electron correlations and Dirac electron states. Through in situ angle-resolved photoemission spectroscopy, we demonstrate a systematic evolution of the bandwidth and effective mass of Jeff=1/2 band in perovskite CaIrO3 induced by strain. The bandwidth of the Jeff=1/2 band undergoes an evident increase under in-plane compressive strain, which could be attributed to the weakening of electron correlations. The compressive strain can potentially shift the position of the Dirac node relative to the Fermi level and play a vital role in the transition from hole-type to electron-type transport characteristics. Our work provides a feasible approach for manipulating the topological Dirac electron states by engineering the strength of electron correlations.
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