{"title":"低功率硅蒸发源--构造、性能和应用","authors":"S. Kovalchuk, M. Nowicki, I. Morawski","doi":"10.1116/6.0003284","DOIUrl":null,"url":null,"abstract":"The construction of a low power silicon evaporation source for thin film deposition applications is proposed in this article. A few differently shaped tungsten filaments were mounted inside a quartz glass crucible, which assured an effective heating of silicon wafer pieces. The sublimation process was monitored at filament powers in the range of 8–22 W, which corresponds to temperatures far below the melting point of Si. The operation of the evaporation source requires only the use of a low voltage power supply. All considered models of evaporation sources are characterized by an easy construction. The measurements carried out with the use of a quartz crystal microbalance sensor enabled to determine the deposition rate at different filament powers for all constructed Si sources and confirm the long-term stability of the silicon flux. The experimental data exhibit the Polany–Wigner dependence of the deposition rate as a function of inverse of power at higher filament powers. Auger electron spectroscopy was used to monitor the deposition of Si on Ag(100) under constant silicon flux. The Auger signal recorded from Si and Ag reflects the growth of subsequent silicon layers. This enabled the determination of the Frank–van der Merwe growth mode of Si on Ag(100) at early stages of growth, the formation time of one Si monolayer, and, thus, the deposition rate. The presented designs of the Si source exhibit long time stable evaporation fully controlled by the applied filament power, which is crucial in the precise adsorption of ultrathin Si layers.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"7 20","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low power silicon evaporation source—Construction, performances, and applications\",\"authors\":\"S. Kovalchuk, M. Nowicki, I. Morawski\",\"doi\":\"10.1116/6.0003284\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The construction of a low power silicon evaporation source for thin film deposition applications is proposed in this article. A few differently shaped tungsten filaments were mounted inside a quartz glass crucible, which assured an effective heating of silicon wafer pieces. The sublimation process was monitored at filament powers in the range of 8–22 W, which corresponds to temperatures far below the melting point of Si. The operation of the evaporation source requires only the use of a low voltage power supply. All considered models of evaporation sources are characterized by an easy construction. The measurements carried out with the use of a quartz crystal microbalance sensor enabled to determine the deposition rate at different filament powers for all constructed Si sources and confirm the long-term stability of the silicon flux. The experimental data exhibit the Polany–Wigner dependence of the deposition rate as a function of inverse of power at higher filament powers. Auger electron spectroscopy was used to monitor the deposition of Si on Ag(100) under constant silicon flux. The Auger signal recorded from Si and Ag reflects the growth of subsequent silicon layers. This enabled the determination of the Frank–van der Merwe growth mode of Si on Ag(100) at early stages of growth, the formation time of one Si monolayer, and, thus, the deposition rate. The presented designs of the Si source exhibit long time stable evaporation fully controlled by the applied filament power, which is crucial in the precise adsorption of ultrathin Si layers.\",\"PeriodicalId\":282302,\"journal\":{\"name\":\"Journal of Vacuum Science & Technology B\",\"volume\":\"7 20\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Vacuum Science & Technology B\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1116/6.0003284\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Vacuum Science & Technology B","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1116/6.0003284","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
本文提出了一种用于薄膜沉积应用的低功率硅蒸发源的构造。在石英玻璃坩埚内安装了一些不同形状的钨丝,以确保硅片的有效加热。在钨丝功率为 8-22 W 的范围内对升华过程进行了监测,其温度远低于硅的熔点。蒸发源的运行只需要使用低压电源。所有型号的蒸发源都具有结构简单的特点。通过使用石英晶体微天平传感器进行测量,可以确定所有构建的硅源在不同灯丝功率下的沉积率,并确认硅流量的长期稳定性。实验数据显示,在灯丝功率较高时,沉积率与功率的倒数呈 Polany-Wigner 依赖关系。在硅通量恒定的情况下,使用欧杰电子能谱监测硅在 Ag(100)上的沉积。从硅和银记录到的欧杰信号反映了后续硅层的生长情况。这样就能确定硅在 Ag(100) 上生长初期的 Frank-van der Merwe 生长模式、一个硅单层的形成时间,从而确定沉积速率。所介绍的硅源设计表现出长时间稳定的蒸发,完全受应用灯丝功率的控制,这对超薄硅层的精确吸附至关重要。
Low power silicon evaporation source—Construction, performances, and applications
The construction of a low power silicon evaporation source for thin film deposition applications is proposed in this article. A few differently shaped tungsten filaments were mounted inside a quartz glass crucible, which assured an effective heating of silicon wafer pieces. The sublimation process was monitored at filament powers in the range of 8–22 W, which corresponds to temperatures far below the melting point of Si. The operation of the evaporation source requires only the use of a low voltage power supply. All considered models of evaporation sources are characterized by an easy construction. The measurements carried out with the use of a quartz crystal microbalance sensor enabled to determine the deposition rate at different filament powers for all constructed Si sources and confirm the long-term stability of the silicon flux. The experimental data exhibit the Polany–Wigner dependence of the deposition rate as a function of inverse of power at higher filament powers. Auger electron spectroscopy was used to monitor the deposition of Si on Ag(100) under constant silicon flux. The Auger signal recorded from Si and Ag reflects the growth of subsequent silicon layers. This enabled the determination of the Frank–van der Merwe growth mode of Si on Ag(100) at early stages of growth, the formation time of one Si monolayer, and, thus, the deposition rate. The presented designs of the Si source exhibit long time stable evaporation fully controlled by the applied filament power, which is crucial in the precise adsorption of ultrathin Si layers.