基于屏蔽式电容负载 SIW 谐振器的小型化宽阻带滤波器

IF 1.6 4区 计算机科学 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Chinese Journal of Electronics Pub Date : 2024-03-01 DOI:10.23919/cje.2023.00.057
Yan Zheng;Hanyu Tian;Yuandan Dong;Yongle Wu
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引用次数: 0

摘要

基于全模电容加载基底集成波导(SIW)谐振器和小型化屏蔽半模电容加载 SIW(S-HMCSIW)腔体,提出了一种新型紧凑型高性能滤波器。由于采用了电容加载技术,半模 SIW(HMSIW)的占地面积进一步减小。通过交叉耦合,所提出的 SIW 滤波器的传输零点增强了阻带抑制能力,并显示出卓越的选择性。对于带通滤波器,测量值 $\vert S_{21}\vert$ 和 $\vert S_{11}\vert$ 分别优于 1.09 dB 和 -14 dB。此外,还观测到 3 dB 分数带宽(FBW)为 9.14-10.76 GHz(FBW=16.2%)。该滤波器的带外抑制高达 2.69f0(f0 = 10 GHz),实现了-20 dB 的宽阻带,尺寸为 0.39 美元/\lambda_\{mathrm{g}}。\times 0.51\lambda_{mathrm{g}}$ only.测量结果与模拟结果非常吻合。
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Miniaturized, Wide Stopband Filter Based on Shielded Capacitively Loaded SIW Resonators
Based on the full-mode capacitively loaded substrate integrated waveguide (SIW) resonator and the miniaturized shielded half-mode capacitively loaded SIW (S-HMCSIW) cavities, a novel compact high-performance filter is proposed. The footprint of the half-mode SIW (HMSIW) is further reduced due to the application of the capacitive-loading technique. By applying cross coupling, the proposed SIW filter's transmission zero enhances the stopband rejection and shows excellent selectivity. For the bandpass filter, the measured $\vert S_{21}\vert$ and $\vert S_{11}\vert$ are better than 1.09 dB and −14 dB, respectively. And a 3-dB fractional bandwidth (FBW) of 9.14-10.76 GHz (FBW=16.2%) is also observed. The filter achieves a wide stopband with a −20 dB out-of-band rejection up to 2.69f 0 (f 0 = 10 GHz), with a size of $0.39\ \lambda_{\mathrm{g}} \times 0.51\ \lambda_{\mathrm{g}}$ only. Good agreement between measurement and simulation is obtained.
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来源期刊
Chinese Journal of Electronics
Chinese Journal of Electronics 工程技术-工程:电子与电气
CiteScore
3.70
自引率
16.70%
发文量
342
审稿时长
12.0 months
期刊介绍: CJE focuses on the emerging fields of electronics, publishing innovative and transformative research papers. Most of the papers published in CJE are from universities and research institutes, presenting their innovative research results. Both theoretical and practical contributions are encouraged, and original research papers reporting novel solutions to the hot topics in electronics are strongly recommended.
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