Analysis of temperature-dependent current–voltage characteristics of Schottky diodes by the modified thermionic emission current model

We have investigated the behavior of current flow across an inhomogeneous Schottky diode (SD) as a function of temperature by numerical simulation. We have used the modified thermionic emission (TE) current expression with a Gaussian distribution of potential barrier heights. This modified TE model assumes the presence of a series of low-barrier patches at the Schottky contact and semiconductor interface. First, we have discussed the behavior of the patch current compound relative to the TE compound in the inhomogeneous SD at 300, 200, and 100 K, as a function of standard deviation and the number of circular patches N. Then, we have investigated the behavior of temperature- and bias-dependent and bias-independent current vs voltage (I–V–T) characteristics in the 75–300 K range. In bias-dependent I–V–T curves obtained for σ1=4.35×10−5cm2/3V1/3 and σ2=7.35×10−5cm2/3V1/3 at N1=1.81×106 or N2=1.81×108, an intersection behavior has been observed in the I–V curve at 75 K for σ2 at both N values; however, the same behavior has been not observed for σ1 at both N values due to σ1<σ2. That is, the current for σ2 at 75 K has exceeded the current at higher temperatures. This behavior has been ascribed to the effective BH to decrease with decreasing temperature value. In the I–V–T curves independent of bias, such an intersection has not been observed for σ1 while it has been observed for σ2 in the I–V curves at both 75 and 100 K. Thus, it has been concluded that the bias-dependeσnt I–V equations must be used to avoid this intersection behavior while fitting the experimental I–V curve of an SD to the theoretical I–V curve.