测定非晶氧化物半导体中的能量无序值

IF 0.4 Q4 PHYSICS, NUCLEAR Nuclear Physics and Atomic Energy Pub Date : 2024-03-25 DOI:10.15407/jnpae2024.01.066
I.I. Fishchuk
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引用次数: 0

摘要

无定形材料薄膜可抵抗高能量辐照。因此,与利用晶体特性的设备相比,利用这些材料特性制造的设备可以在辐射增加的条件下工作更长时间。这些材料的一个重要特征是它们的无序程度。为了确定这一特性,在对非晶氧化物半导体的磁导率进行理论研究时,考虑了导带局部边缘的随机波动模型。该模型采用了有效介质近似法。根据对磁场中纵向和横向电导率变化的实验测量,提出了一种确定能量无序量的方法。
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Determination of energy disorder value in amorphous oxide semiconductors
The amorphous material films are resistant to high-energy irradiation. Therefore, devices built using the properties of these materials can work in conditions of increased radiation much longer than devices using the properties of crystals. An important characteristic of these materials is their degree of disorder. To determine this characteristic, a model of random fluctuations of the local edge of the conduction band is considered for the theoretical study of magnetoconductivity in amorphous oxide semiconductors. The effective medium approximation is used. An approach to determining the amount of energy disorder based on experimental measurement of changes in longitudinal and transverse electrical conductivity in a magnetic field is proposed.
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来源期刊
CiteScore
0.70
自引率
33.30%
发文量
10
审稿时长
19 weeks
期刊介绍: The journal Nuclear Physics and Atomic Energy presents the publications on Nuclear Physics, Atomic Energy, Radiation Physics, Radioecology, Engineering and Methods of Experiment. The journal includes peer-reviewed articles which are completed works containing new results of theoretical and experimental researches and are of interest for the scientists, postgraduate students, engineers and for the senior students.
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