化学合成 BiFeO3-xPbTiO3 薄膜铁电响应的内在和外在贡献

Layiq Zia, Eesha Tur Razia, G. Hassnain Jaffari, S. Ismat Shah
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摘要

多铁性 (BiFeO3)1-x-(PbTiO3)x (1-x)BF-xPT 薄膜在各向异性相边界 (MPB) 附近表现出极高的机电特性,使其成为多种现代设备应用的重要候选材料。然而,由于合成过程中产生的氧空位会导致高电导率,因此制备高质量的 (1-x)BF-xPT 薄膜极具挑战性。本研究旨在了解尺寸和孔隙密度对 (1-x)BF-xPT 薄膜电学特性的影响。通过化学溶液沉积法,采用旋涂法在 Pt/TiO2/SiO2/Si(100) 基底上制备了一系列 (1-x)BF-xPT 固溶体薄膜。X 射线衍射研究显示薄膜具有多晶结构。表面扫描电子显微镜图像显示,薄膜表面均匀,平均晶粒大小在 50 至 200 nm 之间,平均膜厚为 1.5 μm。随着所制备薄膜中 PT 浓度的增加,平均孔径减小,孔数增加。铁电特性分析表明,薄膜表现出室温铁电滞后环。从磁滞回线中提取了极化的各种贡献来源,包括真正的铁电转换和空间电荷贡献。0.30 < x < 0.45 的薄膜显示出较高的剩电位极化值和饱和极化值,表明这些成分显示出 MPB。x = 0.40 的薄膜的剩电位极化值最高(PR = 16.68 μC/cm2)。本文对相位、成分、薄膜形态和铁电响应之间的相关性进行了描述和讨论。
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Intrinsic and extrinsic contributions in the ferroelectric response of chemically synthesized BiFeO3-xPbTiO3 thin films
Multiferroic (BiFeO3)1−x-(PbTiO3)x (1−x)BF−xPT thin films exhibit very high electromechanical properties in the vicinity of the morphotropic phase boundary (MPB), making them important candidates for use in several modern device applications. However, preparing high-quality (1−x)BF−xPT thin films is challenging due to the high conductivity caused by oxygen vacancies produced during the synthesis process. This study aims to understand the effect of size and porosity density on the electrical properties of (1−x)BF−xPT thin films. A series of (1−x)BF−xPT solid solution thin films were fabricated using the spin-coating method on Pt/TiO2/SiO2/Si(100) substrates through chemical solution deposition. X-ray diffraction studies revealed a polycrystalline structure. Surface SEM images showed that the films have a uniform surface with average grain sizes ranging between 50 and 200 nm and an average film thickness of 1.5 μm. A decrease in average pore size and an increase in the number of pores were observed with the increase in PT concentration in the prepared films. Ferroelectric characterization revealed that the films exhibit room-temperature ferroelectric hysteresis loops. Sources of various contributions to polarization were extracted from hysteresis loops, including true ferroelectric switching and space charge contributions. Thin films with 0.30 < x < 0.45 show higher remanent and saturation polarization values, suggesting that these compositions exhibit the MPB. The highest remanent polarization value (PR = 16.68 μC/cm2) was observed for the thin film with x = 0.40. The correlation between the phase, composition, film morphology, and ferroelectric response is described and discussed.
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