锗薄膜中与自旋相关的负磁阻

Zhaoguo Li, Yuechuan Luo, Jia Li, Jicheng Zhang
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摘要

在此,我们报告了 Ge 薄膜的传输特性。在我们的 Ge 薄膜中观察到了低温(T≲50K)下的变程跳跃传输和高温(T≲50K)下的热激活传输。在不同的温度条件下,都能观察到反常的磁传输特性。在低温状态(T≲15K)下,可以看到低磁场下的负磁阻(MR)和高磁场下的正磁阻。在中温区(15K≲T≲100K),随着温度的升高,正磁阻曲线逐渐从线性曲线演变为抛物线曲线,而且磁阻大小似乎对温度不敏感。在高温区(T≲100K),MR 正值随温度升高而增加。通过考虑随角度变化的磁共振,我们可以确定负磁共振来自自旋相关机制,而正磁共振由轨道相关机制引起。然而,要确定异常磁传输特性背后的确切机制,还需要进一步的研究。
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Spin-related negative magnetoresistance in germanium films
Herein, we report the transport properties of Ge films. The variable-range hopping transport at low temperatures (T≲50K) and thermal activation transport at high temperatures (T≳50K) are observed in our Ge films. In the different temperature regimes, the anomalous magnetotransport properties are observed. In the low-temperature regime (T≲15K), the negative magnetoresistance (MR) at low field and positive MR at high field can be seen. In the moderate-temperature regime (15K≲T≲100K), the positive MR curve gradually evolves from a linear curve to a parabolic curve with increasing temperature, and the MR magnitude appears to be insensitive to temperature. In the high-temperature regime (T≳100K), the positive MR value increases with increasing temperature. By considering the angular-dependent MR, we can determine that the negative MR comes from the spin-related mechanism, and the positive MR is caused by the orbital-related mechanism. However, further study is required to determine the exact mechanisms behind the anomalous magnetotransport properties.
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