采用凹栅极和超薄再生氮化铝势垒的常关断氮化镓基 MIS-HEMT 性能提升

IF 0.5 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Semiconductor Technology and Science Pub Date : 2024-02-29 DOI:10.5573/jsts.2024.24.1.25
Shogo Maeda, K. Shinohara, M. Empizo, Nobuhiko Sarukura, M. Kuzuhara, Akio Yamamoto, J. Asubar, S. Kawabata, I. Nagase, A. Baratov, Masaki Ishiguro, Toi Nezu, T. Igarashi, Kishi Sekiyama, S. Terai
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Improved Performance of Normally-off GaN-based MIS-HEMTs with Recessed-gate and Ultrathin Regrown AlGaN Barrier
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来源期刊
Journal of Semiconductor Technology and Science
Journal of Semiconductor Technology and Science ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
0.90
自引率
0.00%
发文量
40
审稿时长
6-12 weeks
期刊介绍: Journal of Semiconductor Technology and Science is published to provide a forum for R&D people involved in every aspect of the integrated circuit technology, i.e., VLSI fabrication process technology, VLSI device technology, VLSI circuit design and other novel applications of this mass production technology. When IC was invented, these people worked together in one place. However, as the field of IC expanded, our individual knowledge became narrower, creating different branches in the technical society, which has made it more difficult to communicate as a whole. The fisherman, however, always knows that he can capture more fish at the border where warm and cold-water meet. Thus, we decided to go backwards gathering people involved in all VLSI technology in one place.
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